公开(公告)号：JP2000208746A

公开(公告)日：2000-07-28

申请号：JP37300499

申请日：1999-12-28

Applicant: IBM

Inventor： AJMERA ATUL ,  DEVENDORA K SADANA ,  DOMINIK J SHEPISU

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/308 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an SOI layer with a pattern wherein no transition region containing many defects is formed. SOLUTION: A flat silicon-on-insulator(SOI) substrate having no transition defect containing an SOI region with a pattern and a bulk area is formed. This method contains a stage of removing transition defects by forming a self- matched trench 30 adjacent to the SOI area 22 between the SOI region and the bulk region 24.