公开(公告)号：GB2600602B

公开(公告)日：2022-11-02

申请号：GB202201258

申请日：2020-07-20

Applicant: IBM

Inventor： PAUL JAMISON ,  TAKASHI ANDO ,  JOHN GREG MASSEY ,  EDUARD CARTIER

IPC: H01L21/02 ,  H01L49/02

Abstract: Embodiments of the present invention are directed to a back-end-of-line (BEOL) compatible metal-insulator-metal on-chip decoupling capacitor (MIMCAP). This BEOL compatible process includes a thermal treatment for inducing an amorphous-to-cubic phase change in the insulating layer of the MIM stack prior to forming the top electrode. In a non-limiting embodiment of the invention, a bottom electrode layer is formed, and an insulator layer is formed on a surface of the bottom electrode layer. The insulator layer can include an amorphous dielectric material. The insulator layer is thermally treated such that the amorphous dielectric material undergoes a cubic phase transition, thereby forming a cubic phase dielectric material. A top electrode layer is formed on a surface of the cubic phase dielectric material of the insulator layer.

公开(公告)号：GB2600602A

公开(公告)日：2022-05-04

申请号：GB202201258

申请日：2020-07-20

Applicant: IBM

Inventor： PAUL JAMISON ,  TAKASHI ANDO ,  JOHN GREG MASSEY ,  EDUARD CARTIER

IPC: H01L21/02 ,  H01L49/02

Abstract: A back-end-of-line (BEOL) compatible metal-insulator-metal on-chip decoupling capacitor (MIMCAP). The BEOL compatible process includes a thermal treatment for inducing an amorphous-to-cubic phase change in the insulating layer (102) of the MIM stack prior to forming the top electrode (302). A bottom electrode layer (104) is formed, and an insulator layer (102) is formed on a surface of the bottom electrode layer (104).The insulator layer (102) can include an amorphous dielectric material. The insulator layer (102) is thermally treated such that the amorphous dielectric material undergoes a cubic phase transition, thereby forming a cubic phase dielectric material. A top electrode layer (302) is formed on a surface of the cubic phase dielectric material of the insulator layer (102).