Rapid melt growing photodetector
    2.
    发明专利

    公开(公告)号:GB2575750A

    公开(公告)日:2020-01-22

    申请号:GB201915262

    申请日:2018-04-10

    Applicant: IBM

    Abstract: A photo detector (10) including: a waveguide (12) of a waveguide material extending over a substrate (22), an insulating layer (26) formed over the waveguide (12) and having an opening (18) exposing the waveguide (12), a photo detector layer (16) formed over the insulating layer (26) and into the opening (18) so as to make contact with the waveguide (12), the photo detector layer 16 having a first end at the opening (18) and a second end distal from the opening (18), the photo detector layer (16) being a gradient material of the waveguide material and germanium wherein a waveguide material portion of the gradient material varies from a maximum at the first end to a minimum at the second end and wherein a germanium portion of the gradient material varies from a minimum at the first end to a maximum at the second end, a photo detector region at the second end, and a photo detector layer extension (30) extending at an angle from the photo detector layer (16) at the second end.

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