公开(公告)号：JP2000031133A

公开(公告)日：2000-01-28

申请号：JP9833399

申请日：1999-04-06

Applicant: IBM

Inventor： EMMANUEL ISLIER COOPER ,  PETER RICHARD DANKOOMU ,  ROBERT BENJAMIN RAIBOVITZ ,  ROSENBERG ROBERT

IPC: H01L21/308 ,  C09K13/04 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To effect highly selective etching and cleaning by causing a perovskite oxide film to come in contact with an etchant solution containing hydrogen peroxide and an arbitrarily selected complexing agent under mild ambient or near ambient conditions. SOLUTION: A perovskite oxide film 12 is formed on the surface of a substrate 10. Then, a structure including the film 12 is etched with an etchant solution. This etchant solution contains hydrogen peroxide, and arbitrarily selected one or both of a complexing agent and a buffer. When the etchant solution contains hydrogen peroxide, the content of hydrogen peroxide in the solution is in the range of about 3-50 wt.%, with the remainder of water. The whole of the layer 12 is not removed in the etching step. The layer 12 is not removed, but thinned. Then, a conductor, such as Pt, Ir, Pd, or W is deposited on the cleaned layer 12. As a result, the conductor can be adhered onto the perovskite oxide film more strongly.