公开(公告)号：DE1589959A1

公开(公告)日：1970-01-02

申请号：DEJ0034160

申请日：1967-07-15

Applicant: IBM

Inventor： MAX D HEURLE FRANCOIS ,  ESAKI LEO CHAPPAQUA ,  SEKI HAJIME

IPC: C23C14/16 ,  H01L21/00 ,  H01L29/00 ,  C23C15/00

Abstract: 1,151,643. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 5 June, 1967 [15 July, 1966], No. 25835/67. Heading H1K. [Also in Division C7] A Schottby-barrier diode is formed by sputtering a layer 7 of metal on to a semi-conductor body 3 which is itself biased during the sputtering process so that contaminants may be sputtered off from the surface while the metal layer 7 is applied. Suitable semi-conductor materials include Si, Ge or GaAs, while the layer 7 may be of a high work-function metal such as W, Cr or Mo for N-type material, or a low work-function metal such as Al, In, Sn, or Zn for P-type material. The preferred form comprises an N-type layer 5 epitaxially deposited on a high conductivity (e.g. degenerate) substrate 3, the metal layer 7 being sputtered on to the epitaxial layer 5. Suitable sputtering apparatus is described, in which the sputtering gas used is argon. The semi-conductor substrate is initially etched clean, and may also be heated during the sputtering process. The metal layer 7 may form a compound, e.g. a metal-silicide; with the semi-conductor surface, thus producing a good mechanical bond.