公开(公告)号：JPH10290009A

公开(公告)日：1998-10-27

申请号：JP31242997

申请日：1997-11-13

Applicant: IBM

Inventor： BERRY WAYNE S ,  FAUL JUERGEN ,  HAENSCH WILFRIED ,  MOHLER RICK L

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To obtain the adjusting technique of the corner conduction in a field effect transistor having no connection with a channel conduction by a method wherein a gate oxide, extending along a part of the side face of a conductive channel, and a part of a gate electrode are provided on the boundary surface of a conductive channel and a trench structure. SOLUTION: A transistor has a conductive channel 10' having a relatively wide width, in the substrate 10 located between each shallow type trench isolation structure 12 and under a gate oxide 14 and a gate electrode 16. When the gate electrode voltage Vt, which is sufficient to turn off the main channel conduction, is applied to the gate electrode 16, the electric field in the conductive channel 10' is made uniform as an equipotential line 18. Corner conduction can be made possible on a part of a narrow width channel where the cross section of the conductive channel is relatively made larger. Accordingly, the degree of contribution of the corner conduction to transistor conduction becomes relatively larger, or on the contrary, larger Vt is required.

公开(公告)号：MY122084A

公开(公告)日：2006-03-31

申请号：MYPI9704939

申请日：1997-10-20

Applicant: IBM

Inventor： BERRY WAYNE S ,  FAUL JUERGEN ,  HAENSCH WILFRIED ,  MOHLER RICK L

IPC: H01L21/3205 ,  H01L21/28 ,  H01L29/78 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/108

Abstract: CORNER CONDUCTION IN A CONDUCTION CHANNEL (10) OF A FIELD EFFECT TRANSISTOR IS CONTROLLED BY THE GEOMETRICAL CONFIGURATION OF THE GATE OXIDE (14, 34, 140) AND SATE ELECTRODE (16, 36, 142) AT THE SIDES OF THE CONDUCTION CHANNEL. ROUNDING THE CORNERS OF THE CONDUCTION CHANNEL OR FORMING DEPRESSIONS (30, 128) AT EDGES OF TRENCH STRUCTURES SUCH AS DEEP OR SHALLOW TRENCH ISOLATION STRUCTURES (12, 26, 112) AND/OR TRENCH CAPACITORS DEVELOP RECESSES IN A SURFACE OF A SUBSTRATE (10) AT AN INTERFACE OF ACTIVE AREAS AND TRENCH STRUCTURES IN WHICH A PORTION OF THE GATE OXIDE AND GATE ELECTRODE ARE FORMED SO THAT THE GATE OXIDE AND GATE ELECTRODE EFFECTIVELY WRAP AROUND A PORTION OF THE CONDUCTION CHANNEL OF THE TRANSISTOR. PARTICULARLY WHEN SUCH TRANSISTORS ARE FORMED IN ACCORDANCE WITH SUB-MICRON DESIGN RULE, THE GEOMETRY OF THE GATE ELECTRODE ALLOWS THE ELECTRIC FIELDS IN THE CONDUCTION CHANNEL TO BE MODIFIED WITHOUT ANGLED IMPLANTATION TO REGULATE THE EFFECTS OF CORNER CONDUCTION IN THE CONDUCTION CHANNEL. THUS THE CONDUCTION CHARACTERISTIC NEAR CUT-OFF CAN BE TAILORED TO SPECIFIC APPLICATIONS AND CONDUCTION/CUT-OFF THRESHOLD VOLTAGE CAN BE REDUCED AT WILL UTILIZING A SIMPLE, EFFICIENT AND HIGH-YIELD MANUFACTURING PROCESS. (FIG. 1A)

公开(公告)号：SG64454A1

公开(公告)日：1999-04-27

申请号：SG1997003836

申请日：1997-10-22

Applicant: IBM

Inventor： BERRY WAYNE S ,  FAUL JUERGEN ,  HAENSCH WILFRIED ,  MOHLER RICK L

IPC: H01L21/28 ,  H01L21/762 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/8232

Abstract: Corner conduction in a conduction channel of a field effect transistor is controlled by the geometrical configuration of the gate oxide and gate electrode at the sides of the conduction channel. Rounding the corners of the conduction channel or forming depressions at edges of trench structures such as deep or shallow trench isolation structures and/or trench capacitors develop recesses in a surface of a substrate at an interface of active areas and trench structures in which a portion of the gate oxide and gate electrode are formed so that the gate oxide and gate electrode effectively wrap around a portion of the conduction channel of the transistor. Particularly when such transistors are formed in accordance with sub-micron design rules, the geometry of the gate electrode allows the electric field in the conduction channel to be modified without angled implantation to regulate the effects of corner conduction in the conduction channel. Thus the conduction characteristic near cut-off can be tailored to specific applications and conduction/cut-off threshold voltage can be reduced at will utilizing a simple, efficient and high-yield manufacturing process.