公开(公告)号：GB2368190B

公开(公告)日：2005-02-23

申请号：GB0109462

申请日：2001-04-18

Applicant: IBM

Inventor： BREEN TRICIA L ,  FRYER PETER ,  NUNES RONALD WAYNE ,  ROTHWELL MARY ELIZABETH

IPC: B41K3/00 ,  C01G15/00 ,  C01G19/00 ,  C23C30/00 ,  G02F1/1333 ,  G03F7/00 ,  G03F7/16 ,  B05D1/28 ,  C23C16/04

Abstract: Microcontact printing to pattern a self-assembled monolayer (SAM) of an alkanephosphonic acid on a film of indium zinc oxide (IZO). The SAM is robust enough to protect the undelying IZO from wet chemical etching, and thus defines a pattern of IZO on the substrate. In the microcontact printing process, a patterned, elastomeric stamp is inked with a solution of octadecylphosphonic acid and brought into conformal contact with the IZO surface. A SAM of alkanesulfonic acid forms where the stamp and the surface make contact; the rest remains underivatized. The stamp is then removed from the surface. Etching the sample in aqueous oxalic acid removes the unprotected areas, while the areas protected by the SAM remain in place.

公开(公告)号：GB2368190A

公开(公告)日：2002-04-24

申请号：GB0109462

申请日：2001-04-18

Applicant: IBM

Inventor： BREEN TRICIA L ,  FRYER PETER ,  NUNES RONALD WAYNE ,  ROTHWELL MARY ELIZABETH

IPC: B41K3/00 ,  C01G15/00 ,  C01G19/00 ,  C23C30/00 ,  G02F1/1333 ,  G03F7/00 ,  G03F7/16 ,  B05D1/28 ,  C23C16/04

Abstract: A method of patterning a metal oxide surface (25) of a substrate (27) by microcontact printing comprises providing a stamp (20) with a surface (21) with at least one indentation (22), coating the stamp with a molecular species (24) terminating in a functional group which is capable of reacting with the metal oxide surface, positioning the coated stamp on the surface of the metal oxide (25) such that the functional group contacts and reacts with at least a portion of the metal oxide surface to form a bond therebetween, and removing the stamp to obtain a self assembled monolayer (SAM). The oxide film surface may be indium zinc oxide or indium tin oxide and the non contacted portion of the film is removed after the patterning stage by etching the exposed portion of the IZO or ITO film.