公开(公告)号：AU5112073A

公开(公告)日：1974-07-18

申请号：AU5112073

申请日：1973-01-15

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD FRANCIS ,  SCHWUTTKE GUENTER HELMUT

IPC: H01L21/762 ,  H01L7/00

公开(公告)号：DE2231891A1

公开(公告)日：1973-04-12

申请号：DE2231891

申请日：1972-06-29

Applicant: IBM DEUTSCHLAND

Inventor： BRACK KARL ,  GOREY EDWARD FRANCIS ,  SCHWUTTKE GUENTER HELMUT

IPC: H01L27/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  B01J17/34

Abstract: 1376526 Isolation in semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 1 Aug 1972 [6 Oct 1971] 35772/72 Heading H1K An area to form an isolated pocket in the semi-conductor body of an integrated circuit (or of a discrete device), is exposed via an apertured mask of molybdenum, tungsten, platinum, gold, silver, silicon dioxide, or silicon nitride to a beam of ions of the semiconductor itself. A discrete implanted layer is formed at some distance below the surface and has an amorphous form of very high resistivity. The body is remasked to expose only the area where sidewalls are needed and implantation is then continued at the previously used ion energy until amorphous sidewalls are formed which reach the surface. The semi-conductors quoted are silicon and germanium and the structures formed may be anealed for one hour at 550‹ or 400‹ C. respectively without alteration of the resistivity of the amorphous material.