公开(公告)号：JP2599560B2

公开(公告)日：1997-04-09

申请号：JP23090893

申请日：1993-08-24

Applicant: IBM

Inventor： GOW THOMAS RICHARD ,  LEBEL RICHARD JOHN

IPC: H01L21/205 ,  C23C16/02 ,  C23C16/42 ,  H01L21/28 ,  H01L21/285

公开(公告)号：JPH06283453A

公开(公告)日：1994-10-07

申请号：JP23090893

申请日：1993-08-24

Applicant: IBM

Inventor： GOW THOMAS RICHARD ,  LEBEL RICHARD JOHN

IPC: H01L21/205 ,  C23C16/02 ,  C23C16/42 ,  H01L21/28 ,  H01L21/285

Abstract: PURPOSE: To form a tungsten silicide film in which cracking or layer crack is lowered with satisfactory matching properties by holding uniformity of a wafer and stability of treatment even if fluorine concentration is low and a ratio of silane to the tungsten is changed in a relatively wide range. CONSTITUTION: Tungsten silicide film (WSix) is formed by reducing tungsten hexafluoride (WF6 ) with a reducing agent of mixture of dichlorosilane (SiH2 Cl2 ), silane (SiH4 ) and hydrogen and subjecting to chemical vapor deposition. According to the method, the WSix film is generated in a CVD reactor for treatment at low pressure and a wafer temperature of about 300 to 550 [ deg.C]. In the above- described embodiment, before the WSix film is deposited, a thin nucleus generating layer is deposited. The deposited film contains low fluorine concentration and excellent uniformity and treatment stability of the wafer.