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公开(公告)号：GB1113447A
公开(公告)日：1968-05-15
申请号：GB5105167
申请日：1965-05-21
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE
Abstract: 1,113,447. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 21 May, 1965 [12 June, 1964], No. 51051/67. Divided out of 1,113,442. Addition to 1,070,261. Heading H1K. The subject matter is identical with that of Specification 1,113,442 but the claims relate to an apparatus in which means such as a pick-off electrode are used to detect the presence of a high field travelling domain in a semi-conductor body.
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公开(公告)号：GB1113445A
公开(公告)日：1968-05-15
申请号：GB5094967
申请日：1965-05-21
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE
Abstract: 1,113,445. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 21 May, 1965 [12 June, 1964], No. 50949/67. Divided out of 1,113,442. Heading H1K. The subject matter is identical with that of Specification 1,113,442 but the claims relate to a body of appropriate material having electrodes defining the extremities of at least two distinct current paths in the body, in particular a bifurcated body. As shown in Fig. 17e a high field travelling domain may be initiated at either A or B and propagated toward a terminal at the right-hand end of the Figure where it is dissipated, or initiated at the latter end and propagated in one or other of the paths terminating at A and B.
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公开(公告)号：DE1177249B
公开(公告)日：1964-09-03
申请号：DEJ0024338
申请日：1963-08-29
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE , PRICE PETER JACK
IPC: C30B25/00 , H01L21/34 , H01L21/479 , H01L29/207 , H01L29/227 , H01L31/16 , H01L33/00 , H01S3/00 , H01S5/04 , H01S5/30 , H03B9/12
Abstract: 1,050,160. Light amplifiers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Aug. 21, 1963 [Aug. 29, 1962], No. 33014/63. Heading H3B. [Also in Division H1] The drift velocity of a flow of charge carriers in a crystalline body is made greater than the phase velocity of a lattice optical mode of vibration in the crystalline body so that energy is exchanged between the optical mode and the flow of carriers to cause amplification of the vibration. As shown in Fig. 2 an N-type gallium arsenide crystal 2 is provided with N-type germanium contacts 3, 4 across which is connected potential source 9 providing a field of 2000 volts/cm. in the crystal body so as to produce a drift velocity V 0 for the electron charge carriers in the direction shown. It is shown theoretically that strong interaction is possible between polar waves of the crystal lattice and the free carriers where the phase velocity of the polar waves is greater than the carriers' drift velocity, the polar waves being those optical modes of vibration of a polar lattice for which the particle has a longitudinal component and which consist of a motion which can be described as a collective displacement of the positive ions with respect to the negative ones. If the drift velocity V o is made larger than the phase velocity, i.e. greater than #/K where # is the frequency and K is the wave vector of the polar wave, the polar wave generated in the crystal body grows with time and is amplified in the -X direction. If the drift velocity is less than the phase velocity attenuation of the polar wave takes place. By coupling external electromagnetic waves to the polar waves inside the crystal amplification of the electromagnetic waves can be achieved. In order to couple light waves having the same frequency as the polar waves to the latter a surface of discontinuity such as 5, 6 is provided across which current can flow. The contacting surfaces 5, 6 are preferably sloping so as to prevent the possibility of a perfectly symmetrical condition existing within the crystal lattice such that the individual wavelets which are produced will tend to cancel each other. If light waves of about 10 3 times that of the polar waves are coupled thereto, then the light waves can be diffracted by polar waves since the latter behave like a stationary diffraction grating, the incident and diffracted waves differing in frequency by the frequency of the polar waves. A beam of X-rays may be modulated and shifted in frequency under the control of an electromagnetic wave applied to a crystal so as to generate polar waves. Alternatively if the electromagnetic wave which generates the polar wave is itself an X-ray there is provided the mixer and I.F. amplifier of an X-ray superheterodyne receiver. If two discontinuents are situated in the solid such that they reflect waves back and forth along the direction of carrier flow they will give rise to oscillations provided that the product of amplification along the path between them times the attenuation in the opposite direction times their reflection coefficients exceeds unity. The polar waves give rise to electromagnetic waves at the interface 6 and are taken from the crystal body 2.
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公开(公告)号：DE2429130A1
公开(公告)日：1975-03-20
申请号：DE2429130
申请日：1974-06-18
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE
Abstract: An interferometer arrangement of either the transmission or reflection type incorporating at least a pair of partially spherical or spherical elements having an index of refraction of approximately two is disclosed. In a preferred embodiment, the spherical or radiation directing elements are glass spheres having an index of refraction of approximately two at the wavelength of a light source being utilized. In a transmission type interferometer, both the spherical or radiation directing elements are utilized as beam splitters and collimators while, in the reflection type interferometer, one of these spheres is used as a beam splitter and collimator while the other is utilized as a retroreflector. The complete spherical symmetry of such radiation directing elements permits them to function with any orientation relative to the optical path between them.
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公开(公告)号：GB1113444A
公开(公告)日：1968-05-15
申请号：GB5094867
申请日：1965-05-21
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE
Abstract: 1,113,444. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 21 May, 1965 [12 June, 1964], No. 50948/67. Divided out of 1,113,442. Heading H1K. The subject matter is identical with that of Specification 1,113,442 but the claims relate to arrangements for initiating a single high field travelling domain in a semi-conductor body. If an input voltage pulse of the form shown in Fig. 8a exceeds the threshold voltage VT for only a sufficient time to initiate a domain, the output current obtained is as shown in Fig. 8b. Such pulsed operation may be exploited to provide a pulse amplifier, delay line or logic device.
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Patent Agency Ranking
公开(公告)号：GB1113442A
公开(公告)日：1968-05-15
申请号：GB2175665
申请日：1965-05-21
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE
Abstract: 1,113,442. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 21 May, 1965 [12 June, 1964], No. 21756/65. Heading H1K. An electric field in excess of a threshold value applied to a body of Ga As or like polar semiconductor produces in the body an abrupt fall of conductance, in a time of the order of 10 -10 seconds, which can give rise to current fluctuations at microwave frequency as described in Specification 1,070,261. The fall in conductance is associated with the formation, adjacent the cathode terminal of such a body, of a localized region or domain of abnormally high electric field and this domain propagates towards the anode terminal where it is dissipated. The current fluctuations described in the abovementioned prior Patent are shown to be the consequence of successive transits of such domains through the body. The invention exploits this new understanding of the effect, and its claims relate to a system in which the body has at least three electrodes which are selectively energized to produce appropriate fields in the body. Other aspects of the subject matter are claimed in Specifications 1,113,443, 1,113,444, 1,113,445, 1,113,446 and 1,113,447. The description with respect to Figs. 1 to 3 (not shown) recapitulates the subject matter of Specification 1,070,261 and Figs. 4 to 7 (not shown) illustrate experiments which have been performed to establish the physical mechanism of the effect. Fig. 8 (not shown, but see Specification 1,113,444) depicts input voltage and output current pulse shapes related to the use of the effect to produce a single domain transit, i.e. pulsed operation. Figs. 9a to 9c (not shown) depict diagrammatically various electrode configurations and Figs. 10 and 11 (not shown) input and output pulse shapes obtainable by their use. In particular, a voltage less than that necessary to establish the required threshold field may be applied between two electrodes and a domain initiated by applying an appropriate potential to a third electrode. Fig. 12 shows a suitable three-electrode device consisting of a wafer 10 with a terminal 48 connected to a contact covering one surface of the wafer, and terminals 46, 47 connected to contacts on the opposite wafer surface which are made by covering this surface with metal and then cutting a slot 49 to separate this covering into two electrodes. Figs. 13 to 17 (not shown, but see Specifications 1,113,443, 1,113,445 and 1,113,446) depict bodies of irregular shape and/or non-uniform resistivity, and systems exploiting such bodies, e.g. as logic elements.
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公开(公告)号：DE2362415A1
公开(公告)日：1974-07-04
申请号：DE2362415
申请日：1973-12-15
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE
Abstract: 1394019 Ink droplet printers INTERNATIONAL BUSINESS MACHINES CORP 29 Nov 1973 [29 Dec 1971] 55404/72 Heading B6F An ink droplet printer comprises droplet charging means in the form of a series of charging electrode segments 14, a charging pulse being applied to the segments in turn synchronized with the passage of a droplet past the segments. The pulses may be binary or analogue to scan the droplet train. In the case of analogue pulses, a combination of digital pulses may be applied to a charging ring (Fig. 5A, not shown) or each charging segment may comprise segments forming a ring, the segments being graded in size (Fig. 5B, not shown).
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公开(公告)号：GB1113446A
公开(公告)日：1968-05-15
申请号：GB5095067
申请日：1965-05-21
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE
Abstract: 1,113,446. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 21 May, 1965 [12 June, 1964], No. 50950/67. Divided out of 1,113,442. Addition to 1,070,261. Heading H1K. The subject matter is identical with that of Specification 1,113,442 but the claims relate to a body of appropriate semi-conductor material having two electrodes on one surface. As shown in Fig. 15 this surface has a slot 53 between the areas contacted by the electrodes 51 and 52.
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公开(公告)号：GB1113443A
公开(公告)日：1968-05-15
申请号：GB5094767
申请日：1965-05-21
Applicant: IBM
Inventor： GUNN JOHN BATTISCOMBE
Abstract: 1,113,443. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. 21 May, 1965 [12 June, 1964], No. 50947/67. Divided out of 1,113,442. Heading H1K. The subject matter is identical with that of Specification 1,113,442 but the claims relate to field intensifying arrangements, viz. arrangements in which an electric field set up in a body is higher in one region than in others. Highfield travelling domains are initiated preferentially in such regions. The field intensification may be produced by using a body with locally reduced cross-section, as in Fig. 13b, or locally increased resistivity and/or by the use of a trigger electrode (which may be a capacitive probe) to produce in the body a locally increased field.
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