公开(公告)号：JPH0621062A

公开(公告)日：1994-01-28

申请号：JP5168693

申请日：1993-03-12

Applicant: IBM

Inventor： HAABAATO KAARU KUTSUKU ,  POURU ARUDEN FUAARAA SHINIA ,  ROBAATO MAIKERU JIEFUKEN ,  UIRIAMU TOOMASU MOTOSHIFU ,  ADORUFU AANESUTO WAASHINGU

IPC: H01L21/28 ,  H01L21/60 ,  H01L23/485 ,  H01L29/45 ,  H01L21/321

Abstract: PURPOSE: To provide a method for connecting a chip on a silicon wafer to a substrate, while using a solder contact. CONSTITUTION: A metalization complex 6 is composed of a high melting point metal 16, nickel 18 and copper 20. It is preferable that the high meeting point metal be titanium(Ti), but any other suitable high melting point metal such as zirconium or hafnium may be used as well. A metal may be added to the copper, as needed. This metalization complex is used for connecting a solder contact 22 to a semiconductor wafer 10.

公开(公告)号：JPS58122695A

公开(公告)日：1983-07-21

申请号：JP18221482

申请日：1982-10-19

Applicant: IBM

Inventor： HAABAATO KAARU KUTSUKU ,  GEIRII DAGURASU GURAISU ,  CHIYUNGU HON RAMU

IPC: G11C17/00 ,  G11C16/02 ,  H01L27/02

公开(公告)号：JPS5894196A

公开(公告)日：1983-06-04

申请号：JP16240682

申请日：1982-09-20

Applicant: IBM

Inventor： HAABAATO KAARU KUTSUKU ,  RONARUDO ROI TORAUTOMAN

IPC: G11C17/00 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792