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    1.
    发明专利
    未知

    公开(公告)号：DE2310191A1

    公开(公告)日：1974-01-24

    申请号：DE2310191

    申请日：1973-03-01

    Applicant: IBM

    Inventor： HENDEL ROBERT JAMES ,  JAMBA JUN THEODORE FRANK ,  KEEFE GEORGE EDWARD ,  ROSIER LAURENCE LEE

    IPC: G11C11/14 ,  G11C19/08

    Abstract: A structure for increasing the reliability of a magnetic bubble domain memory system in which the operating margins of various components within the system are enlarged so that the margins of the components will have a larger area of overlap. For components in which a lessening of the effect of the bias field Hz is desirable (splitters, generators, corner propagation elements, etc.), a thin layer of magnetically soft material (for instance, permalloy) is provided which extends over the area of the magnetic sheet in which the component function takes place. This thin layer is in addition to the overlay elements used to provide the function. In a memory system, selectively placed "thin patches" of permalloy or strips of permalloy are used in the critical component areas to improve operating margins of these components.

    2.
    发明专利
    未知

    公开(公告)号：DE2553754A1

    公开(公告)日：1976-07-08

    申请号：DE2553754

    申请日：1975-11-29

    Applicant: IBM

    Inventor： ALMASI GEORGE STANLEY ,  HENDEL ROBERT JAMES ,  KEEFE GEORGE EDWARD ,  LIN YEONG SHOW ,  MCGOUEY RICHARD PETER

    IPC: G11C11/14 ,  G11C19/08 ,  H01F10/10 ,  H01F41/14 ,  H01F41/34 ,  H01F10/00

    Abstract: A method for making a high density magnetic bubble domain system including the functions of read, write, storage, transfer, and annihilation. Only three masking steps are required, of which only one requires critical alignment. The proces makes use of the fact that magnetic disks can be placed on non ion implanted regions without adversely affecting the propagation properties of the implanted regions. Thus, the magnetic disks can be used to define ion implantation masks as well as for providing functions such as generation, propagation, reading, and annihilation. Magnetic elements for generation, storage and propagation, reading and annihilation are deposited in the same non-critical masking step, while all condutors used for writing, reading, and transfer are deposited by a single masking step requiring critical alignment.

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