公开(公告)号：JP2000208513A

公开(公告)日：2000-07-28

申请号：JP2000005345

申请日：2000-01-14

Applicant: IBM

Inventor： VINCENT J MAKUGAHEI ,  THOMAS H IVERS ,  HENRY A NIE III ,  JOYCE C RIEU

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To improve adhesion to a copper member by positioning the copper member in a semiconductor device, forming the layer of germanide copper, germanium oxide, germanium nitride of the mixture of them on the copper member and forming the layer of a material which is not bonded to the copper on any one layer. SOLUTION: The wirings 1 of copper are formed on a semiconductor wafer and the wirings 1 of copper are electrically separated by doping silicon dioxide, phosphosilicate glass and boron and containing the dielectric 2 of an intermediate level. Then, the layer 3 of germanide copper, germanium oxide, germanium nitride or the mixture of them is formed on the surfaces of the wirings 1 of copper. The layer 5 of silicon nitride or silicon oxide, which is not bonded to copper, is formed on the layer 3 of germanide copper, germanium oxide, or germanium nitride.