公开(公告)号：JP2001176269A

公开(公告)日：2001-06-29

申请号：JP2000315712

申请日：2000-10-16

Applicant: IBM

Inventor： KORTS PAUL W ,  HORVEYS WILLIAM PAUL ,  BRIAN LI JI ,  KIRIHATA TOSHIAKI ,  JOHN MICHAEL ROSS ,  WILLIAM U SHEN

IPC: G06F12/16 ,  G06F12/02 ,  G11C8/08 ,  G11C11/407

Abstract: PROBLEM TO BE SOLVED: To provide a selectable function which makes the address portion of data words separable and enables the address portion to be used for a different purpose without disturbing the contents stored in a memory array. SOLUTION: A memory assembly which has an input port 242, an output port 216, and the memory array 23 containing a plurality of addressable storing positions in one mode contains the selectable function which sends the address information portion 212 of data which appear in a data route to other processing routes 770 and 771 by by-passing the memory array 232 without disturbing the information stored at the addressable storing positions.

公开(公告)号：JP2006086530A

公开(公告)日：2006-03-30

申请号：JP2005265168

申请日：2005-09-13

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DONZE RICHARD L ,  ERICKSON KARL ROBERT ,  HORVEYS WILLIAM PAUL ,  SHEETS JOHN EDWARD ,  JON ROBERT TETZLOFF ,  ZUMBRUNNEN LAURA M

IPC: H01L21/329 ,  H01L29/786 ,  H01L29/861

CPC classification number: H01L29/861 ,  H01L29/785

Abstract: PROBLEM TO BE SOLVED: To provide an improved Fin FET diode structure and a method of forming the Fin FET diode structure.
SOLUTION: There are provided the Fin FET diode structure and its forming method for forming the Fin FET diode structure. The Fin FET diode structure is formed by driving a P+dopant in a primary side of a diffused fin and an N+dopant in a secondary side to give a P+N+diode structure.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供改进的Fin FET二极管结构和形成Fin FET二极管结构的方法。 解决方案：提供Fin FET二极管结构及其形成Fin FET二极管结构的形成方法。 Fin FET二极管结构通过驱动扩散翅片的初级侧中的P +掺杂剂和次级侧的N +掺杂剂形成，以产生P + N +二极管结构。 版权所有（C）2006，JPO＆NCIPI