Fast model-based optical proximity correction
    1.
    发明专利
    Fast model-based optical proximity correction 有权
    基于快速模型的光学近似校正

    公开(公告)号:JP2005234571A

    公开(公告)日:2005-09-02

    申请号:JP2005039330

    申请日:2005-02-16

    CPC classification number: G03F7/705 G03F1/36 G03F7/70441

    Abstract: PROBLEM TO BE SOLVED: To provide a fast and high-performance projection optics simulation method and system with a non-scalar (i.e. "non-Hopkins") effect taken into account. SOLUTION: A generalized bilinear kernel independent of a mask transmission function is formed to include various influences, and the kernel is processed by decomposition to compute an image including a non-scalar effect. Dominant eigenfunctions of the generalized bilinear kernel can be used to previously compute a convolution with possible polygon sectors. Then a mask transmission function can be decomposed into polygon sectors, and a weighted pre-image may be formed from a coherent sum of the pre-computed convolution for appropriate mask polygon sectors. The image at a point may be formed from the incoherent sum of the weighted pre-images over all of the dominant eigenfunctions of the generalized bilinear kernel. The resulting image can be used to perform MBOPC (model-based optical proximity correction). COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供考虑到非标量(即“非霍普金斯”)效应的快速和高性能的投影光学模拟方法和系统。 解决方案:形成独立于掩模传输功能的广义双线性内核以包含各种影响,并且通过分解处理内核以计算包括非标量效应的图像。 广义双线性核的主要本征函数可用于预先计算可能的多边形扇区的卷积。 然后,掩模传输功能可以被分解成多边形扇区,并且可以从针对适当的屏蔽多边形扇区的预先计算的卷积的相干和形成加权的预先图像。 一点上的图像可以由广义双线性核的所有主要特征函数上的加权预图像的非相干和形成。 所得到的图像可用于执行MBOPC(基于模型的光学邻近校正)。 版权所有(C)2005,JPO&NCIPI

    PROCESS FOR DEPOSITING METALLIC COPPER

    公开(公告)号:CA1225363A

    公开(公告)日:1987-08-11

    申请号:CA460823

    申请日:1984-08-10

    Applicant: IBM

    Abstract: PHOTOCHEMICAL CONVERSION OF SiO TO SiO2 SiO can be photochemically converted to SiO2 by irradiation with ultraviolet light of wavelengths less than 220 nm in an atomosphere including oxygen. The irradiation can be pulsed or continuous radiation, and energy fluences of at least about 5 mJ/cm2 will effect the photochemical reaction. The conversion of SiO to SiO2 can be used to provide an etch-stop in a fabrication process and to provide improved devices and circuits, in technologies such as Josephson and semiconductor device technologies.

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