公开(公告)号：SE435125B

公开(公告)日：1984-09-03

申请号：SE7611757

申请日：1976-10-22

Applicant: IBM

Inventor： HOWARD J K ,  HO P S-C

IPC: A01K1/01 ,  B41J2/335 ,  G11C11/14 ,  C22C21/00 ,  C23C14/00 ,  C23C14/16 ,  C23C14/58 ,  G11B5/31 ,  H01B1/02 ,  H01F10/06 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H05K3/06 ,  H01B5/14

Abstract: A method for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200 DEG C. and 525 DEG C. for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6x10-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

公开(公告)号：AU505872B2

公开(公告)日：1979-12-06

申请号：AU2018376

申请日：1976-12-02

Applicant: IBM

Inventor： HOWARD J K ,  HO PAUL SIU-CHUNG

IPC: G11C11/14 ,  A01K1/01 ,  B41J2/335 ,  C22C21/00 ,  C23C14/00 ,  C23C14/16 ,  C23C14/58 ,  G11B5/31 ,  H01B1/02 ,  H01F10/06 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L27/01 ,  H01L29/43 ,  H05K1/09 ,  H01L49/02 ,  H01L21/285 ,  H01L21/324 ,  H01L23/54 ,  H01L21/308

公开(公告)号：SE7611757L

公开(公告)日：1977-04-25

申请号：SE7611757

申请日：1976-10-22

Applicant: IBM

Inventor： HOWARD J K ,  HO P S-C

IPC: A01K1/01 ,  B41J2/335 ,  C22C21/00 ,  G11C11/14 ,  C23C14/00 ,  C23C14/16 ,  C23C14/58 ,  G11B5/31 ,  H01B1/02 ,  H01F10/06 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H05K3/00 ,  H01B5/14 ,  H05K3/06

Abstract: A method for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200 DEG C. and 525 DEG C. for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6x10-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.