公开(公告)号：DE69018276T2

公开(公告)日：1995-10-19

申请号：DE69018276

申请日：1990-01-02

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  HU YUNG-HAW

IPC: C03C10/02 ,  C04B35/468 ,  C04B35/47 ,  H01G4/12 ,  H01B3/08 ,  H01B3/12

Abstract: A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO3 and/or SrTiO3 on the order of about 0.5-10.0 mu m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 mu m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol% of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.

公开(公告)号：DE69018276D1

公开(公告)日：1995-05-11

申请号：DE69018276

申请日：1990-01-02

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  HU YUNG-HAW

IPC: C03C10/02 ,  C04B35/468 ,  C04B35/47 ,  H01G4/12 ,  H01B3/08 ,  H01B3/12

Abstract: A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO3 and/or SrTiO3 on the order of about 0.5-10.0 mu m surrounded by a thin microcrystalline insulating barrier layer at the grain boundary about 0.01-0.10 mu m thick wherein the conductivity of the grains is enhanced by addition of about 0.1-4.0 mol% of a dopant selected from among Group V elements, Ge and Si substantially incorporated in the bulk lattice of the grains upon Ti sites. A novel process for forming the glass-ceramic material is also disclosed.