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公开(公告)号：AT221999T
公开(公告)日：2002-08-15
申请号：AT94119895
申请日：1994-12-16
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , FONTANA ROBERT EDWARD , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW , TSANG CHING HWA
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：SG43168A1
公开(公告)日：1997-10-17
申请号：SG1996004746
申请日：1994-05-25
Applicant: IBM
Inventor： AHLERT RICHARD HENRY , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDRES , ULLAH MUHAMMAD INAYET
Abstract: A high-density recording media comprising longitudinally oriented polycrystalline barium ferrite exhibits large coercivity, corrosion resistance, high hardness and durability. Films are prepared by on-axis sputtering at ambient temperatures from stoichiometric targets followed by a post-deposition anneal at approximately 850 DEG C. to induce crystallization. Crystallization yields a magnetic film with large in-plane remanence and a fine scale texturing that greatly improves the tribological performance of barium ferrite disks. Exceptional durability can be achieved on disks without overcoats. Grain sizes as small as 200 ANGSTROM are produced by doping with small amounts of Cr2O3 or other additives. Coercivities greater than 4000 Oe are achieved even in small grain films.
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公开(公告)号：SG42849A1
公开(公告)日：1997-10-17
申请号：SG1996000132
申请日：1994-12-16
Applicant: IBM
Inventor： COFFEY KEVIN JOHN , FONTANA ROBERT EDWARD , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW , TSANG CHING HWA
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：GB2278369B
公开(公告)日：1997-01-15
申请号：GB9410519
申请日：1994-05-25
Applicant: IBM
Inventor： AHLERT RICHARD HENRY , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW , ULLAH MUHAMMED INAYET
Abstract: A high-density recording media comprising longitudinally oriented polycrystalline barium ferrite exhibits large coercivity, corrosion resistance, high hardness and durability. Films are prepared by on-axis sputtering at ambient temperatures from stoichiometric targets followed by a post-deposition anneal at approximately 850 DEG C. to induce crystallization. Crystallization yields a magnetic film with large in-plane remanence and a fine scale texturing that greatly improves the tribological performance of barium ferrite disks. Exceptional durability can be achieved on disks without overcoats. Grain sizes as small as 200 ANGSTROM are produced by doping with small amounts of Cr2O3 or other additives. Coercivities greater than 4000 Oe are achieved even in small grain films.
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公开(公告)号：IN190594B
公开(公告)日：2003-08-09
申请号：IN1430DE1994
申请日：1994-11-09
Applicant: IBM
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Patent Agency Ranking
公开(公告)号：SG49605A1
公开(公告)日：1998-06-15
申请号：SG1996000761
申请日：1994-06-08
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW
Abstract: A heterogeneous thin film structure (10) including a discontinuous layer (15) of ferromagnetic material deposited on an insulating substrate (13) and overcoated with a layer (17) of nonmagnetic electrically conductive material exhibits giant magnetoresistance in saturation fields on the order of 350 Oersteds. A layer of ferromagnetic material is deposited on a heated insulating substrate by evaporation techniques to form a layer of isolated ferromagnetic particles and overcoated with a nonmagnetic conductive material to form a plurality of ferromagnetic particles embedded in a nonmagnetic conductive matrix. As the ferromagnetic and nonmagnetic materials are deposited separately, it is not required that the two materials be immiscible and subsequent annealing is not required to induce phase separation.
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公开(公告)号：DE69431149T2
公开(公告)日：2003-05-28
申请号：DE69431149
申请日：1994-12-16
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , FONTANA ROBERT EDWARD , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW , TSANG CHING HWA
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：DE69431149D1
公开(公告)日：2002-09-12
申请号：DE69431149
申请日：1994-12-16
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , FONTANA ROBERT EDWARD , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW , TSANG CHING HWA
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：DE69419202T2
公开(公告)日：2000-01-20
申请号：DE69419202
申请日：1994-04-07
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW
IPC: G01R33/09 , G11B5/39 , H01F10/08 , H01F10/14 , H01F10/32 , H01L43/08 , H01L43/10 , G01R33/06 , H01F10/00
Abstract: A magnetoresistive read sensor incorporates a granular multilayer sensing element comprising a plurality of layers of generally flat particles of a ferromagnetic material embedded in a nonmagnetic electrically conductive material. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point. The ferromagnetic and the nonmagnetic materials are mutually immiscible, or may be miscible or partially miscible and processed in a manner to control interdiffusion. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic conductive material on a substrate and then annealing the structure. During the annealing cycle, the layers of nonmagnetic material above and below the ferromagnetic layers penetrate at grain boundaries and break the continuity of the ferromagnetic layers to form layers or planes of ferromagnetic particles embedded in a matrix of nonmagnetic material.
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公开(公告)号：DE69419202D1
公开(公告)日：1999-07-29
申请号：DE69419202
申请日：1994-04-07
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW
IPC: G01R33/09 , G11B5/39 , H01F10/08 , H01F10/14 , H01F10/32 , H01L43/08 , H01L43/10 , G01R33/06 , H01F10/00
Abstract: A magnetoresistive read sensor incorporates a granular multilayer sensing element comprising a plurality of layers of generally flat particles of a ferromagnetic material embedded in a nonmagnetic electrically conductive material. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point. The ferromagnetic and the nonmagnetic materials are mutually immiscible, or may be miscible or partially miscible and processed in a manner to control interdiffusion. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic conductive material on a substrate and then annealing the structure. During the annealing cycle, the layers of nonmagnetic material above and below the ferromagnetic layers penetrate at grain boundaries and break the continuity of the ferromagnetic layers to form layers or planes of ferromagnetic particles embedded in a matrix of nonmagnetic material.
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