WIDE BAND READ OF MAGNETORESISTIVE HEAD FOR DATA STORAGE APPARATUS

    公开(公告)号:JP2000285403A

    公开(公告)日:2000-10-13

    申请号:JP2000068582

    申请日:2000-03-13

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To enlarge a channel bandwidth without deteriorating a signal-to-noise ratio performance by forming an input impedance of a read back amplifier of a combination of impedances related to a gain stage and an active terminal, and making the impedance almost equal to a characteristic impedance of a mutual connection part. SOLUTION: In a current detection read back amplifier constitution 300, an MR element Rmr present at a head 301 is connected to a current detection read back amplifier 302 via a mutual connection part 303. A characteristic impedance of the mutual connection part 303 satisfies Z0=R0, and an input impedance Zin is raised to a level of 2O-RO by positive feedback. When an input impedance of the read back amplifier is electronically raised to agree with the characteristic impedance of the mutual connection part 303, a signal-to-noise ratio performance of the channel does not change. A total bandwidth of a channel front end is determined only by an electronics bandwidth.

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