1.
    发明专利
    未知

    公开(公告)号:DE2250989A1

    公开(公告)日:1973-05-24

    申请号:DE2250989

    申请日:1972-10-18

    Applicant: IBM

    Abstract: 1411555 Matrix displays INTERNATIONAL BUSINESS MACHINES CORP 6 Nov 1972 [19 Nov 1971] 51115/72 Heading G5C [Also in Division H1] A process for forming an array of LEDs in a III-V compound substrate 10 includes covering its surface with an upper layer 14 which is impervious to a diffusant and has windows therein, and an oxide lower layer 12 which is pervious to the diffusant. The layer 12 may be silicon dioxide deposited pyrolytically, and pervious to zinc, magnesium and cadmium dopants. The layer 14 may be silicon nitride, aluminium oxide, phosphosilicate glass or various metals. To improve masking of the layer 14, a further layer 16 of silicon dioxide is deposited over layer 14. Following photo-etching of windows in layers 14, 16, the dopant is diffused into the substrate through the layer 12. The substrate may be of GaAs, GaP, AlAs, BP or a mixed III-V compound, e.g. GaAs x P 1-x , and may be doped with tin, silicon or tellurium to a concentration of 2À10 18 atoms/c.c. Contacts (not shown) are made to the diffused regions via apertures in layer 12, the contacts comprising a gold zinc alloy covered with chromium and gold layers.

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