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公开(公告)号：DE1719496A1
公开(公告)日：1971-08-26
申请号：DEJ0035442
申请日：1968-01-08
Applicant: IBM
Inventor： JOHN CUOMO JEROME , JOSEPH GAMBINO RICHARD
IPC: C01B19/00 , C01B25/06 , C01G11/00 , C01G13/00 , C09K11/70 , C22C1/00 , C25B1/00 , C30B9/14 , H01L21/00 , H01L21/208 , H05B33/14 , B01J17/06
Abstract: 1,173,939. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 5 Oct., 1967 [13 Jan., 1967], No. 45427/67. Heading H1K. [Also in Division C7] A II-V, III-V and II-VI semi-conductor compound formed by a metal selected from Zn, Cd, Hg, Al, Ga, In and an element selected from P, As, Sb, S, Se, Te are prepared by cathodic deposition from a fused salt solution including ions of the chosen metal and element, the applied potential being sufficient to cause simultaneous deposition of the metal and element to form the desired compound. Preferably the constituent which is deposited in excess of its stoichiometric ratio in the compound is volatile at the temperature of the fused salt bath and is one of the Group V or Group VI elements. Typically the semi-conductor compound has the zinc blende structure and if desired it may be epitaxially deposited on a cathode formed by a single crystal of silicon. As described the fused bath includes alkali metal halides as diluent. The cell may comprise a tantalum crucible or quartz coated with graphite and serves also as anode while a graphite rod may serve as cathode. Germanium may also be used as a cathode. An inert cell atmosphere-argon, helium or nitrogen-is provided. The bath may also include compounds of dopants for the semiconductor which are codeposited with it. Examples are given of depositing crystals of GaP from baths containing Ga 2 O 3 and NaPO 3 ; A1P from baths containing Al 2 O 3 and NaPO 3 ; 8. of growing epitaxially on a Si crystal ZnSe from a bath containing ZnCl 2 and SeCl 4 . GaP doped with Zn is produced from a bath consisting of NaF, NaPO 3 , Ga 2 O 3 and ZnO and is deposited on a crystal of Si. Similarly by including also Na 2 SeO 4 in the bath, a photoluminescent GaP doped with both Zn and Se is obtained. By depositing first P-type GaP doped with Zn and then coating this with N-type GaP doped with Se, a PN junction is formed suitable for an electroluminescent diode which emits red light on the passage of current.
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公开(公告)号：DE1947060A1
公开(公告)日：1970-03-26
申请号：DE1947060
申请日：1969-09-17
Applicant: IBM
Inventor： JOSEPH GAMBINO RICHARD , MOLNAR STEPHAN V
Abstract: 1,225,105. Coating with Rare Earth Alloys. INTERNATIONAL BUSINESS MACHINES CORP. Aug. 27, 1969 [Sept. 19, 1968], No. 42563/69. Headings C7A and C7F. [Also in Division H1] An alloy contact is provided on a rare-earth semi-conductor body by depositing the alloy on the semi-conductor body, heating the alloy and the body in an inert atmosphere to the melting point of the alloy to cause the alloy to melt, and continuing the heating to cause the alloy to partially diffuse into the body, the alloy comprising a rare earth metal such as cerium, praseodymium, neodymium, lanthanum, gadolinium, terbium, dysprosium, halmium, erbium, thulium, ytterbium or lutetium, and a metal of good electrical conductivity such as gold, silver, copper, zinc, nickel, cobalt, palladium or platinum. In one embodiment a mixture of powdered lanthanum and silver is placed in a crucible in an inductively heated furnace in an argon atmosphere and fused to form an eutectic alloy. In a second embodiment rods of lanthanum are placed with gold foil on the hearth plate of a conventional D.C. furnace and the arc struck to form an ingot of alloy which is inverted and remelted at least three times to ensure homogeneity. A table of various alloy compositions is given. The semi-conductor material is an alloy of the equation Eu x RE 1- x A where Eu is the rare earth europium, RE is a rare earth element, A is a chalcogen and 0
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公开(公告)号：DE1619968A1
公开(公告)日：1971-03-18
申请号：DE1619968
申请日：1967-04-25
Applicant: IBM
Inventor： JOSEPH GAMBINO RICHARD
Abstract: 1,135,168. Ferrites. INTERNATIONAL BUSINESS MACHINES CORP. 31 March, 1967 [25 April, 1966], No. 14822/67. Heading C1A. [Also in Divisions B1, H1 and H4] A monocrystalline spinel ferrite film is produced by coating a substrate crystal with a mixture of the ferrite and a solid flux, and heating to form initially a solution of ferrite in flux and then to evaporate the flux. The coating may be applied by evaporating a slurry of ferrite, flux, and isopropyl alcohol. The ferrite may be Li 0 . 5 Fe 2 . 5 O 4 , Li 0.5 Cr x Fe 2.5-x O 4 (O
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