-
公开(公告)号:JPH11261040A
公开(公告)日:1999-09-24
申请号:JP10599
申请日:1999-01-04
Applicant: IBM
Inventor: JOYCE MORINERI AKOSERA , MANN RANDY W
IPC: H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a floating gate in a nonvolatile memory cell, which has the floating gate and a control gate. SOLUTION: First, a plurality of isolation structures 20, which are extended above the surface of a substrate 22 and below the surface of the substrate 22, are formed in the substrate. Then, a floating gate layer 26 is formed on the substrate on at least one part of each isolation structure and between the isolation structures. Lastly, for forming a plurality of floating gate regions isolated by the isolation structures, the gate layer is flattened up to reach the isolation structures.