公开(公告)号：JPH11261040A

公开(公告)日：1999-09-24

申请号：JP10599

申请日：1999-01-04

Applicant: IBM

Inventor： JOYCE MORINERI AKOSERA ,  MANN RANDY W

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a floating gate in a nonvolatile memory cell, which has the floating gate and a control gate. SOLUTION: First, a plurality of isolation structures 20, which are extended above the surface of a substrate 22 and below the surface of the substrate 22, are formed in the substrate. Then, a floating gate layer 26 is formed on the substrate on at least one part of each isolation structure and between the isolation structures. Lastly, for forming a plurality of floating gate regions isolated by the isolation structures, the gate layer is flattened up to reach the isolation structures.