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公开(公告)号：JPH03182724A
公开(公告)日：1991-08-08
申请号：JP31791489
申请日：1989-12-08
Applicant: IBM
Inventor： FUKUZAWA KAORU , KANO SATORU , TAKAHASHI YUTAKA
Abstract: PURPOSE: To provide a non-mechanical light beam deflector having a deflection speed higher than GHz by providing a voltage applying means and a laser light incidence means for a plane waveguide type diffraction grating formed in a super-grating structure body or a waveguide structure including this structure body. CONSTITUTION: A deflection part having a slab waveguide structure consists of a holographic collimator 3 and a diffraction grating 4, and a laser output 5 is spread in the slab waveguide at an angle determined by the refractive index of the waveguide part of a laser part and that adjacent to the laser part. The angle of deflection in the diffraction grating 4 is a function of the refractive index but can be controlled by a charged current, and the response time of the change of the refractive index is the order of sub-nanoseconds. Thus, the non-mechanical light beam deflector having a deflection speed higher than GHz is formed.
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公开(公告)号：JPH03182725A
公开(公告)日：1991-08-08
申请号：JP31791689
申请日：1989-12-08
Applicant: IBM
Inventor： FUKUZAWA KAORU , KANO SATORU , KUMADA KIYOSHI , BIKUTAA WAI RII , FURANKURIN EMU SHIERENBAAGU , TAKAHASHI YUTAKA
Abstract: PURPOSE: To obtain a nonlinear optical element at low cost by forming a thin- film structural body so as to have fine structures by intercalation constitution in a direction perpendicular to a substrate and forming the fine structures of super-lattice structures. CONSTITUTION: When a (C10 H21 NH3 )2 PbI4 thin film 2 is formed on the substrate 1, the so-called multiple quantum well structures in which the two-dimensional layers of Pb exist an intervals of 21.3Å along the c-axis direction in the crystal and the respective layer of PbI4 , i.e., the quantum wells exist at every 21.25Å are formed on the substrate surface. The quantum confinement effect depends only on the structure in the c-axis direction even in the case of the (C10 H21 NH3 )2 PbI4 single crystal itself. The sufficient optical effect based on the quantum confinement effect is obtd. even in the case having the quantum wells structures only in the c-axis direction. As a result, the formation of the nonlinear optical element without using intricate and costly equipment is made possible.
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公开(公告)号：JPH0675257A
公开(公告)日：1994-03-18
申请号：JP20349792
申请日：1992-07-30
Applicant: IBM
Inventor： YAMATO SOICHI , KUMADA KIYOSHI , KANO SATORU
Abstract: PURPOSE: To obtain a nonlinear optical device having sufficiently large nonlinearity by using a specified multiple quantum well structure in a material layer on a substrate. CONSTITUTION: The material layer formed on a substrate has a multiple quantum well structure in which insulating layers and semiconductor layers are alternately deposited and the potential for an electron in the semiconductor layer is made asymmetric in regard to the perpendicular direction to the substrate. The difference between the min. energy level in the conductive band and the max. energy level in the valence band of the semiconductor layer is controlled to about >=3eV. For example, in the figure showing a unit of the multiple quantum well structure using Nail as an insulating layer and ZnSe as a semiconductor layer, the upper solid line represents the potential for an electron in the conductive band and the lower solid line shows the corresponding potential in the valence band. The semiconductor layer has an asymmetric structure of combined quantum welts in which two ZnSe layers interpose one NaCl layer. The dot lines represent three states of an electron trapped in the well, and optical nonlinearity is produced by the transition of the electron.
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