公开(公告)号：DE3580962D1

公开(公告)日：1991-01-31

申请号：DE3580962

申请日：1985-09-20

Applicant: IBM

Inventor： KAUFFMANN BRUCE ALAN ,  LAM CHUNG HON

IPC: G11C11/401 ,  G11C14/00 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C11/00

Abstract: A non-volatile dynamic memory cell in which the non- volatile element has two different areas for electron injection, such that direct overwriting of previously stored non-volatile data is permitted without an intervening erase cycle. The non-volatile storage element is a floating gate electrode (14A) which has dual control gates (16A, 16B) disposed thereon. Each control gate includes a layer (24A, 24B) of dual electron injector structure (DEIS) material and a polysilicon gate (16A, 16B). When writing a "0" from the volatile storage capacitor (14B) to the floating gate (14A), one of the control gates removes charge from the floating gate (14A). To write a "1", the other programming gate injects charge into the floating gate. The above charge transfer does not take place if the previously stored logic state and the logic state to be written in are identical. In order to minimize the adverse effects of process variations, the gate electrode (16A) of the word line device is electrically in common with one of the control gates.