公开(公告)号：JPH0865147A

公开(公告)日：1996-03-08

申请号：JP17573395

申请日：1995-07-12

Applicant: IBM

Inventor： SUDEIIRU MANISUWAMII GOUDA ,  HIYUN JIYON SHIN ,  KEBUIN ROBAATO RENAA

IPC: G11C11/407 ,  H02M3/07 ,  H03K19/0948

Abstract: PROBLEM TO BE SOLVED: To obtain the charge pump circuit which generates an output voltage substantially double as high as its input voltage without causing a voltage drop by a switching device. SOLUTION: A charge pump including 1st and 2nd precharge/boost circuits 2 and 4 switches a p-MOSFET switching device P13 so as to hold a certain voltage level which is double as large as the input without causing any discharge (leak) of charges. The 1st precharge/boost circuit 2 includes a p-MOSFET switch P11 which is connected to a power source VDD and an inverter I66 which has its output connected to the gate of a switch P11. The 2nd precharge/boost circuit 4 includes a p-MOSFET switch P21 connected to the power source VDD and a NAND gate I68 having its output connected to the gate of the switch P21.