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    Tunnel diode multistable circuit
    3.
    发明专利
    Tunnel diode multistable circuit 未知

    公开(公告)号：GB1085178A

    公开(公告)日：1967-09-27

    申请号：GB4920665

    申请日：1965-11-19

    Applicant: IBM

    Inventor： KOHN GERHARD ,  SEITZER DIETER

    IPC: H03K3/315

    Abstract: 1,085,178. Tristable tunnel diode circuits. INTERNATIONAL BUSINESS MACHINES CORPORATION. Nov. 19, 1965 [Dec. 24, 1964], No. 49206/65. Heading H3T. A switching circuit for use as an amplifier of the first half of a bipolar pulse which is insensitive to the second half, has a current-voltage characteristic with three stable regions separated by two negative resistance regions, and is composed of three parallel current paths, two of which contain tunnel diodes oppositely poled with respect to one another and the third of which consists of a resistor. The two diodes are forwardly biased (Fig. 3, not shown). In a practical form (Fig. 5) the bias sources for the tunnel diodes are in the form of a voltage divider R1, R2 across a voltage source V s . The circuit is initially in its central stable state (A - , Fig. 4, not shown), and a positive current pulse at 11 will switch it to its positive highvoltage state (B), while a negative current pulse will switch it to its negative high-voltage state (C). Switching direct from (B) to (C) or vice versa needs a pulse of greater amplitude than the initial pulse and hence the circuit is insensitive to the second half of a normal bipolar pulse from a thin film magnetic store. Asymmetries in the diode characteristics can be corrected by changing the ratio of R1 and R2, which can be constructed as a potentiometer. The source V s can be a strobe pulse generator with a sharp initial peak to reset the circuit to point A on the characteristic at the end of the peak. The sum of R and the parallel connection of R1 + R2 (in ohms) should be between 4/3 and 4/5 times the ratio of the voltage (in millivolts) provided by the source and the tunnel-diode peak current (in milliamps),

    Microwave generator
    7.
    发明专利
    Microwave generator 未知

    公开(公告)号：GB1121788A

    公开(公告)日：1968-07-31

    申请号：GB3306167

    申请日：1967-07-19

    Applicant: IBM

    Inventor： KOHN GERHARD

    IPC: H01L29/00 ,  H01L47/00 ,  H03B5/18

    Abstract: 1,121,788. Microwave oscillators. INTERNATIONAL BUSINESS MACHINES CORP. 19 July, 1967 [30 Sept., 1966], No. 33061/67. Heading H3T. [Also in Division H1] A microwave oscillator employs a transistor (preferably field-effect) having a coupled pair of resonant transmission lines distributed along the length of the transistor. The equivalent circuit is shown in Fig. 5, one line of each pair (Q, Q 1 ) being attached to the source electrode and the others (G, S) to the gate and drain respectively. The necessary feedback is provided by the gate-source capacitance C GS and an output is taken at 54. In the preferred construction, Fig. 7, the electrodes (Q, G, S) are formed as strips extending across a piece of semi-conductor material 71 on an insulating substrate 70 of GaAs or Al 2 O 3 The layer 71 is epitaxially deposited and may be N-type GaAs, InSb, Si or Ge. Electrodes Q and S may be of A1 forming ohmic contacts while G is of Au or Mo to provide a Schottky barrier. At their ends the electrodes are formed into enlarged plates 72-74 separated by insulating material, e.g. SiO 2 , to comprise the capacitors C 1- C 4 (Fig. 5). The source electrode Q is extended over the other two to provide the second line of each transmission line. The transistor may also be of the insulated gate MOS type.

    Improvements in or relating to thin magnetic film storage devices
    8.
    发明专利
    Improvements in or relating to thin magnetic film storage devices 未知

    公开(公告)号：GB1076569A

    公开(公告)日：1967-07-19

    申请号：GB3590364

    申请日：1964-09-02

    Applicant: IBM

    Inventor： JUTZI WILHELM ,  KOHN GERHARD

    IPC: G11C7/00 ,  G11C11/14 ,  G11C11/15 ,  H01F10/06 ,  H01L27/22

    Abstract: 1,076,569. Magnetic information storage apparatus. INTERNATIONAL BUSINESS MACHINES CORPORATION. Sept. 2, 1964 [Sept. 27, 1963], No. 35903/64. Heading H3B. [Also in Division H1] Non-destructive read-out of a thin magnetic film store is achieved by providing a keeper member of magnetic material adjacent each storage cell, effective to return the cell to its original magnetization direction after it has been switched to the hard direction for a time less than the relaxation time constant of the field due to the keeper member. The member comprises soft magnetic material which may be of ferrite or a vapour deposited film and may be isotropic or anisotropic. The relaxation time constant is preferably between 5 and 10 nano-seconds. The member may be in the form of a sheet covering a plane matrix (Fig. 5, not shown) or may form the substrate upon which the film elements are deposited. In the latter case the sheet is provided with a copper coating to act as return conductor for the bit lines (Fig. 7, not shown). Eddy currents induced in the conductive layer tend to assist restoration of the film to its initial state after switching. In other embodiments a separate member is provided for each film and has a similar size and shape to the film. In Fig. 9, store cell 15 and read cell 14 are driven to opposite remanent states by a bit pulse in line B and a word pulse in line W. During read-out eddy currents tend to inhibit switching of store cell 15 so that on removing the read-out pulse cell 14 is restored by the fields due to cell 15 and to the eddy currents in line B. In a modification the sense line and bit line are separate (Fig. 10, not shown), while in a further modification inner and outer bit/sense lines are provided interconnected at one end by an impedance, and connected at the same end to the conductive substrate by a second impedance, while the other end of the outer conductor is connected directly to the substrate. Cells 14 and 15 may exhibit a different coercive force.

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