Fine-pitch joining pad structure
    1.
    发明专利

    公开(公告)号:GB2631864A

    公开(公告)日:2025-01-15

    申请号:GB202414143

    申请日:2023-02-19

    Applicant: IBM

    Abstract: A semiconductor device includes two integrated circuit (IC) chips. The first IC chip includes substrate, a spacer connected to the substrate and including holes, wherein at least one of the holes has a first shape, and solder bumps positioned in the holes, respectively. The second IC chip includes a substrate, electrode pads extending from the substrate and connected to the solder bumps, respectively. At least one of the electrode pads that corresponds to the at least one of the solder bumps has a second shape, and the first shape and the second shape are non-coextensive such that there is at least one gap between the first shape and the second shape when projected on each other.

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