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公开(公告)号:JPS5771570A
公开(公告)日:1982-05-04
申请号:JP12949981
申请日:1981-08-20
Applicant: Ibm
Inventor: HANGU RIANGU HIYU , KOOCHIYAN JIYU
CPC classification number: G11C19/0816
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公开(公告)号:JPS58147881A
公开(公告)日:1983-09-02
申请号:JP21477882
申请日:1982-12-09
Applicant: IBM
Inventor: TEIMOSHII JIYOSEFU GIYARAGAA , KOOCHIYAN JIYU
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公开(公告)号:JPS5798184A
公开(公告)日:1982-06-18
申请号:JP16434381
申请日:1981-10-16
Applicant: IBM
Inventor: HANGU RIANGU HIYU , KOOCHIYAN JIYU
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公开(公告)号:JPH04121809A
公开(公告)日:1992-04-22
申请号:JP41362090
申请日:1990-12-25
Applicant: IBM
Inventor: KOOCHIYAN JIYU , MOHAMADO TOOFUITSUKU KURANBI , POOKAN WAN
Abstract: PURPOSE: To prevent the degradation in the sensitivity of an MR sensor and to make the magnetic characteristics and physical characteristics of the two sections of the MR sensor the same by building the MR element having a center tap into a magnetic head. CONSTITUTION: This magneto-resistive converter head assembly 10 used together with a servocontrol system is built-in with a center tap conductor 14 produced by a high-resistivity material and the conductor 14 does not disturb the magnetic arrangement or bias of the MR element 20. The element 20 is adhered onto a substrate 12, is patterned and is adhered with a thin insulating layer at the time of production of the MR element. A photoresist masking layer is formed in order to determine both of a center tap region and a conductor region. A high-resistivity center tap conductive material is adhered after the removal of the insulating layer. Next, the photoresist masking layer is used in order to protect the center tap region while the outer conductive of the insulating layer is exposed. The high-resistivity layer is removed by etching and an exchange conductor metallic layer is adhered.
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公开(公告)号:JPS58115933A
公开(公告)日:1983-07-09
申请号:JP16240382
申请日:1982-09-20
Applicant: IBM
Inventor: KOOCHIYAN JIYU
IPC: H03K19/168 , G11C11/14 , G11C19/08
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公开(公告)号:JPS58105481A
公开(公告)日:1983-06-23
申请号:JP15972782
申请日:1982-09-16
Applicant: IBM
Inventor: RICHIYAADO JIYOOJI HAAKO , KOOCHIYAN JIYU , IAN RUISU SANDAASU
Abstract: A swap gate for ion-implanted contiguous disk bubble devices using folded minor loops is disclosed. The bubble device has a major loop, a folded minor loop and a swap element positioned between the major loop and the folded end of the minor loop. The swap element has a first portion for interchanging bubbles with the major loop, a second portion for receiving bubbles from a first region of the folded end of the minor loop, and a third portion for transferring bubbles from the first portion to a second region of the folded end of the minor loop. The folded end of the minor loop also has a third region positioned between the first and second regions to form two bubble storage locations. The bubble device has a conductor associated with the major loop and the first portion of the swap element to form a first transfer gate. The device also includes a second conductor associated with the folded minor loop and the second portion of the swap element to form a second transfer gate. The third portion of the swap element combines with the folded minor loop to form a merge element. In a preferred embodiment, the device has a quadruple period major loop which transfers a block of data into a single bit position on each of the minor loops.
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