公开(公告)号：DE69402108D1

公开(公告)日：1997-04-24

申请号：DE69402108

申请日：1994-04-22

Applicant: IBM

Inventor： CYWAR DOUGLAS ,  HESS DON HERMAN ,  LALONDE CHRISTIAN

IPC: C23F1/00 ,  C23F1/38 ,  H01L21/48 ,  H01L23/12 ,  H05K3/00 ,  H05K3/06 ,  H05K3/38 ,  G03F7/20

Abstract: Metal is selectively etched from a substrate by: (i) applying an acrylic negative photoresist to the substrate, (ii) imaging and developing the photoresist, (iii) exposing the photoresist to actinic radiation of wavelength 200-310 nm or 2.4-8 microns, and (iv) contacting the photoresist-coated substrate with an etchant so as to remove portions of the metal not covered with photoresist.