公开(公告)号：FR2376490A1

公开(公告)日：1978-07-28

申请号：FR7736207

申请日：1977-11-24

Applicant: IBM

Inventor： KEEFE GEORGE E ,  LIN YONG S

IPC: G11C11/14 ,  G11C19/08

Abstract: A switch for transferring magnetic bubble domains from one propagation path to another using a magnetic charged wall is described. The magnetic charged wall bridges the two propagation paths and causes the domain to strip out along the charged wall. By pulsing an overlying conductor, the charged wall and the associated strip domain will shrink away from one side of the conductor in order to translate the domain to the other side. In contrast with previous transfer gates using current carrying conductors where the magnetic field produced by current through the conductors served as the major bubble translational force, the present switch utilizes a magnetic charged wall as the driving source, the current through the conductor being used only for modification of the charged wall. Therefore, the switching margins are maximized to be substantially the same as the bubble propagation margins and the switching currents required are reduced from those in previously used transfer gates. The present switch is particularly useful as a transfer gate in a major/minor loop memory which is fabricated using ion implanted propagation patterns. Various propagation element geometries can be used to provide the bridging charged wall.