3.
    发明专利
    未知

    公开(公告)号:IT1149881B

    公开(公告)日:1986-12-10

    申请号:IT2210880

    申请日:1980-05-16

    Applicant: IBM

    Abstract: A process for plating thick chromium coatings for engineering applications comprises depositing a thin initial layer from a low concentration chromium III/thiocyanate bath and depositing the bulk of the remaining thickness from a relatively higher concentration chromium III/thiocyanate bath. Deposits produced by this two-stage process are more cohesive and smoother than those obtainable by plating the entire thickness from the high concentration bath alone.

    ELECTRODEPOSITION OF CHROMIUM AND ITS ALLOYS

    公开(公告)号:ZA828368B

    公开(公告)日:1983-09-28

    申请号:ZA828368

    申请日:1982-11-15

    Applicant: IBM

    Abstract: A chromium electroplating electrolyte containing trivalent chromium ions, a complexant, a buffer agent and thiocyanate ions for promoting chromium deposition, the thiocyanate having a molar concentration lower than that of the chromium ions. The chromium preferably has a concentration lower than 0.01M. Preferably the complexant is selected so that the stability constant K1 of chromium complex is in the range 10 M . Complexants in this range include aspartic acid, iminodiacetic acid, nitrilotriacetic acid and 5-sulphosalicylic acid.

Patent Agency Ranking