公开(公告)号：DE1153255B

公开(公告)日：1963-08-22

申请号：DEI0015992

申请日：1959-02-05

Applicant: IBM DEUTSCHLAND

Inventor： LITZ FRANK ALBERT

IPC: F15B11/12 ,  F15B15/12

公开(公告)号：DE2632035A1

公开(公告)日：1977-03-17

申请号：DE2632035

申请日：1976-07-16

Applicant: IBM

Inventor： LITZ FRANK ALBERT ,  MATHISEN EINAR SKAU ,  SCHUMANN JUN PAUL AUGUST ,  VALENTINO CARL ROBERT

IPC: H01J9/233 ,  H01J9/44 ,  H01J29/45 ,  H01L31/10 ,  G01N1/00 ,  B65G47/46

Abstract: A charge storage diode array target is provided with a resistive layer over the output side of the target over the diode portions and the area between diodes, with metal contact caps over the resistive layer over the diode portions. The target is operationally aged with input radiation sufficient to produce an output signal current density of at least about 300 nanoamps per square centimeter at a given reverse bias potential, for a period of at least 50 hours. The target thereafter exhibits high beam acceptance and low lag characteristic.