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公开(公告)号：DE1499728A1
公开(公告)日：1970-03-19
申请号：DE1499728
申请日：1966-10-17
Applicant: IBM
Inventor： GEORGE AKMENKALNS IVARS , LOTIS GAMBLIN RODGER , ARTHUR LORD PHILIP
Abstract: 1,171,119. Digital data storage. INTERNATIONAL BUSINESS MACHINES CORP. 21 Oct., 1966 [22 Oct., 1965], No. 47117/66. Heading G4C. [Also in Division H1] A microwave absorption element, primarily for use as a data-storage element, comprises a toroid of gyromagnetic material (e.g. ferrite) circularly magnetized in a selected direction and means for propagating microwave energy in the vicinity of the toroid whereby an amount of energy dependent upon the direction of magnetization is absorbed. As shown, an array of toroids 1a, 1b &c. is arranged adjacent a strip line 22, 38 from which microwave energy at the gyromagnetic resonance frequency of the toroids is distributed to a series of helical conductors 24, 26 &c. each arranged within one of the toroids. The helices set up circularly polarized (c.p.) waves within the toroids which are either absorbed or transmitted according to whether the direction of the remanent magnetization of the relevant toroid is the same as or opposite to the direction of rotation of the c.p. wave. The unabsorbed energy is coupled to detection circuits by means of directional couplers 32a, 32b, &c. The toroids are brought to desired states of remanence by means of axial conductors (not shown) through which currents are passed in the required directions. The pattern of remanent states of the toroids may represent one word in a memory store and the word may be read-out by a microwave interrogation pulse on line 22. The coils may be arranged on the outsides of the toroids and the latter may be axially elongated. The toroid of Fig. 8 consists of a dielectric member 100 having cylindrical ferrite inserts 104. A microwave helix 106 is printed on the outside surface of the toroid.
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公开(公告)号：DE1524861B1
公开(公告)日：1971-03-11
申请号：DE1524861D
申请日：1967-07-26
Applicant: IBM
Inventor： LOTIS GAMBLIN RODGER , ARTHUR LORD PHILIP
Abstract: 1,182,840. Magnetic storage elements. INTERNATIONAL BUSINESS MACHINES CORP. 2 Aug., 1967 [4 Aug., 1966], No. 35404/67. Heading H1T. [Also in Division H3] In order to write information into an anisotropic thin film microwave absorption memory of the type shown in Specification 1,182,839, a substantially hard axis magnetic field is applied along each column and a substantially easy axis magnetic field is applied along each row. The matrix, Fig. 1, comprises a plurality of continuous closed hard axis loop thin film structures 2 each enclosing a sense line 10 connected at one end to a microwave source 6 and a sense amplifier detector. In order to write information into the store a plurality of word drivers 20 are each connected to drive lines 22 arranged generally parallel to the hard axis of the films as shown and a plurality of driver circuits 26, which supply bit pulses of lesser intensity than the word drivers 20 are connected to bit lines 28 which extend generally parallel to the easy axis and are looped back. Each driver line 28, Fig. 2, comprises an upper leg 28a and a lower leg 28b each leg comprising a plurality of lands 36 in the shape of a parallelogram and the lands being interconnected by links 45, 46. In operation a bit current flowing from top to bottom is represented by a vector which has a component parallel to the easy and to the hard axis of the films and since the drive line is looped back upon itself the current now flows from the bottom of the figure to the top which current has a vector along the easy axis which cancels out that due to the current in the upper leg 28a and a vector along the hard axis which adds to that of the upper leg. The resultant of the current flowing in the bit line 28 is to provide a magnetic field along the easy axis. At the same time a current is passed through the appropriate word drawer line 22 which line is directed along the easy axis and hence a field is produced parallel to the hard axis. When the pulses cease the resultant magnetization of the film takes up one or the other of the positions along the easy axis determined by the binary digit stored therein.
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公开(公告)号：DE1299026B
公开(公告)日：1969-07-10
申请号：DEJ0034202
申请日：1967-07-20
Applicant: IBM
Inventor： LOTIS GAMBLIN RODGER
Abstract: 1,182,839. Magnetic storage apparatus. INTERNATIONAL BUSINESS MACHINES CORP. 1 Aug., 1967 [4 Aug., 1966], No. 35212/67. Heading H3B. [Also in Division H1] In a magnetic anisotropic thin film memory device 2 information stored in the device is read out by sensing the variation in absorption of an R.F. signal applied to a sense line 12 arranged perpendicular to the cary axis 22 of the film due to the film when the magnetization of the film is varied along its easy axis by a pulse on a perturb line 27 arranged perpendicular to the sense line. The sense line 12 is surrounded by a closed hard axis loop film 3, 4, 5, 6 and is connected at one end to an R.F. source 18 and at the other end to a diode detector 20. Arranged perpendicular to the sense line 12 is a perturb line 27 along which line a pulse is passed which generates a magnetic field parallel to the easy axis 22 of the film. In operation the R.F. signal from source 18 generates a magnetic field perpendicular to the easy axis 22 and since the frequency of the R.F. signal is partially in resonance with the electrons in the thin film structure the signal is partially absorbed in the film. Depending on whether a "]" or "0" is stored, represented by the vectors 24, 26 along the easy axis the perturb field due to the pulse on the line 27 is either parallel or antiparallel to the vectors 24, 26 and hence the amount of absorption varies, Fig. 2 (not shown), and increases if a binary "1" is stored and decreases if a binary "0" is stored, Figs. 6a. 6b (not shown). The read out is non-destructive and the output signal at detector 20 increases with increase of disturb pulse and has a longer pulse width for longer perturb pulses. A plurality of the devices 2 may be arranged in a matrix, Fig. 8, in which the coupled hard axis structures 2 are shown as continuous elements rather than discrete ones. Information is written into the store as described in Specification 1,182,840. 1,182,840. Thin film magnetic stores. INTERNATIONAL BUSINESS MACHINES CORP. 2 Aug., 1967 [4 Aug., 1966], No. 35404/67. Heading H3B. [Also in Division H1] In order to write information into an anisotropic thin film microwave absorption memory of the type shown in Specification 1,182,839, a substantially hard axis magnetic field is applied along each column and a substantially easy axis magnetic field is applied along each row. The matrix, Fig. 1, comprises a plurality of continuous closed hard axis loop thin film structures 2 each enclosing a sense line 10 connected at one end to a microwave source 6 and a sense amplifier detector. In order to write information into the store a plurality of word drivers 20 are each connected to drive lines 22 arranged generally parallel to the hard axis of the films as shown and a plurality of driver circuits 26, which supply bit pulses of lesser intensity than the word drivers 20 are connected to bit lines 28 which extend generally parallel to the easy axis and are looped back. Each driver line 28, Fig. 2, comprises an upper leg 28a and a lower leg 28b each leg comprising a plurality of lands 36 in the shape of a parallelogram and the lands being interconnected by links 45, 46. In operation a bit current flowing from top to bottom is represented by a vector which has a component parallel to the easy and to the hard axis of the films and since the drive line is looped back upon itself the current now flows from the bottom of the Figure to the top which current has a vector along the easy axis which cancels out that due to the current in the upper leg 28a and a vector along the hard axis which adds to that of the upper leg. The resultant of the current flowing in the bit line 28 is to provide a magnetic field along the easy axis. At the same time a current is passed through the appropriate word driver line 22 which line is directed along the easy axis and hence a field is produced parallel to the hard axis. When the pulses cease the resultant magnetization of the film takes up one or the other of the positions along the easy axis determined by the binary digit stored therein.
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Patent Agency Ranking
公开(公告)号：DE1499729A1
公开(公告)日：1970-10-01
申请号：DE1499729
申请日：1966-10-20
Applicant: IBM
Inventor： LOTIS GAMBLIN RODGER , ARTHUR LORD PHILIP
Abstract: 1,171,119. Digital data storage. INTERNATIONAL BUSINESS MACHINES CORP. 21 Oct., 1966 [22 Oct., 1965], No. 47117/66. Heading G4C. [Also in Division H1] A microwave absorption element, primarily for use as a data-storage element, comprises a toroid of gyromagnetic material (e.g. ferrite) circularly magnetized in a selected direction and means for propagating microwave energy in the vicinity of the toroid whereby an amount of energy dependent upon the direction of magnetization is absorbed. As shown, an array of toroids 1a, 1b &c. is arranged adjacent a strip line 22, 38 from which microwave energy at the gyromagnetic resonance frequency of the toroids is distributed to a series of helical conductors 24, 26 &c. each arranged within one of the toroids. The helices set up circularly polarized (c.p.) waves within the toroids which are either absorbed or transmitted according to whether the direction of the remanent magnetization of the relevant toroid is the same as or opposite to the direction of rotation of the c.p. wave. The unabsorbed energy is coupled to detection circuits by means of directional couplers 32a, 32b, &c. The toroids are brought to desired states of remanence by means of axial conductors (not shown) through which currents are passed in the required directions. The pattern of remanent states of the toroids may represent one word in a memory store and the word may be read-out by a microwave interrogation pulse on line 22. The coils may be arranged on the outsides of the toroids and the latter may be axially elongated. The toroid of Fig. 8 consists of a dielectric member 100 having cylindrical ferrite inserts 104. A microwave helix 106 is printed on the outside surface of the toroid.
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公开(公告)号：DE1283893B
公开(公告)日：1968-11-28
申请号：DEJ0033818
申请日：1967-06-02
Applicant: IBM
Inventor： LOTIS GAMBLIN RODGER
Abstract: 1,162,745. Typewriters etc.; selective printing. INTERNATIONAL BUSINESS MACHINES CORP. 9 May, 1967 [3 June, 1966], No. 21388/67. Heading B6F. [Also in Division H3] A thyristor circuit (see Division H3) is used to operate a print hammer winding 2. When thyristor 1 is fired to operate the hammer, a commutating capacitor 7 switches off a thyristor 4 and through a diode 12 rapidly charges a capacitor 13 with its upper plate negative. The commutating capacitor rapidly charges through a transistor 5 which is now conducting and capacitor 13 begins to charge in a positive direction through resistor 14. This continues until the capacitor voltage fires thyristor 4 and so through the action of the commutating capacitor switches off 1 and de-energizes the print hammer. If the timing components 10-14 are omitted the circuit is bi-stable.
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公开(公告)号：DE1774161A1
公开(公告)日：1971-09-30
申请号：DE1774161
申请日：1968-04-24
Applicant: IBM
Inventor： LOTIS GAMBLIN RODGER , DEWEY ROSHON JUN DAVID
Abstract: 1,211,119. Scanning lasers. INTERNATIONAL BUSINESS MACHINES CORP. 3 April 1968 [28 April, 1967], No. 16015/68. Heading H1C. A laser 8, having a partially light transmitting resonator reflector 5a and elements 5, 7 for selecting a particular spatial mode, is associated with a light amplifier 10, which amplifies light which is transmitted through reflector 5a and reflects the amplified light back into laser 8. As a result the energy density within laser 8 prior to selection of a particular mode is relatively high and the delay in the production of the selected mode after actuation of the selection elements is reduced. Elements 5, 7 each Consist of a stack of laminar electro-optic crystals, the crystals in the two stacks extending in mutually perpendicular directions. Also included in laser 8 are lenses 2, 3 and-a polarizer 6. Initially a voltage is applied to all the crystals in both stacks so that light from active medium 1, after being plane polarised by polarizer 6 becomes elliptically polarized by element 7. The light reflected from 7a then loses energy in passing through polarizer 6, a similar process occurring with element 5. Light passing through element 5 and reflector 5a, however, is amplified before being returned to the main resonator. The energy density in the cavity is thus maintained just below the laser threshold for each mode prior to selection. To select a mode the bias voltage is removed from one crystal in each stack so that the selected mode does not become elliptically polarized in elements 5, 7. The losses having been thus reduced this mode is amplified and the lasing threshold is rapidly exceeded.
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公开(公告)号：DE1499731A1
公开(公告)日：1970-05-27
申请号：DE1499731
申请日：1966-10-21
Applicant: IBM
Inventor： LOTIS GAMBLIN RODGER , JAMES TUNIS CYRIL
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公开(公告)号：DE1524860A1
公开(公告)日：1969-12-11
申请号：DE1524860
申请日：1967-07-21
Applicant: IBM
Inventor： LOTIS GAMBLIN RODGER
Abstract: 1,181,248. Magnetic storage apparatus; transistor circuits. INTERNATIONAL BUSINESS MACHINES CORP. 2 Aug., 1967 [4 Aug., 1966], No. 35405/67. Headings H3B, H3T. [Also in Division H1] In a magnetic thin film memory device in which a V.H.F. signal is applied to the film to read out information stored therein a sense line is coupled to a phase detector to detect differences in phase between the V.H.F. signal and the signal induced in the sense wire during read out. The memory matrix of Fig. 5 comprises a plurality of word drive lines 14 arranged parallel to the easy axis, each drive line being enclosed by a closed hard loop anisotropic thin film member 2 of generally trapezoidal crosssection, Fig. 1 (not shown). In order to read out information stored in the matrix determined by the direction of the magnetization vectors along the easy axis a V.H.F. source 32 provides a V.H.F. signal to a plurality of V.H.F. gates 122-125, one of which is selected by the matrix type gate select circuit 126 so that a V.H.F. signal is applied to the selected word drive line 14. This results in a reduction of the strength of the magnetic state of each bit and a corresponding resultant E.M.F. is generated in the bit sense lines 28 which E.M.F. is advanced 90 degrees out of phase from the signal on the drive line 14 if a " 1 " is stored in the bit and is retarded 90 degrees out of phase from the signal on the drive line 14 if a " 0 " is stored. In order to detect the difference in phase, phase sensitive detectors 136, Fig. 3 (not shown), are connected to the sense lines 28, each phase detector comprising a transistor to the base of which is connected the sense line and to the emitter of which is connected via an R.C. network the V.H.F. signal, the output at the collector of the transistor being a maximum for one binary value and a minimum for the other. The V.H.F. source 32 may be connected to two opposite conductivity type transistors 34, 36 which are alternately switched on to deliver positive and negative spikes of voltage to an LC parallel circuit at twice the frequency of the V.H.F. source, Fig. 2. Fig. 4 shows one of the gates 122-125. In operation both diodes 110, 108 are normally back biased so that no V.H.F. signal applied to terminal 106 reaches output 102. A gate signal switches transistors 90 on and so forward biases diodes 110, 108. The gate signal is summed with the output of the V.H.F. line by resistor 98 to prevent a pedestal from being superimposed on the V.H.F. signal.
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