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    Multi-layer pn junction semiconductive flying spot generator
    5.
    发明授权
    Multi-layer pn junction semiconductive flying spot generator 失效
    多层PN结半导体飞行发生器

    公开(公告)号：US3480830A

    公开(公告)日：1969-11-25

    申请号：US3480830D

    申请日：1967-01-13

    Applicant: IBM

    Inventor： HORTON JOHN W ,  LYNCH ROBERT J

    IPC: H01L27/146 ,  H05B33/08 ,  H05B33/12 ,  H05B37/00 ,  H05B39/00 ,  H05B41/00

    CPC classification number: H01L27/14643 ,  H05B33/08 ,  H05B33/12 ,  Y02B20/325

    Abstract: 1,209,069. Electroluminescence. INTERNATIONAL BUSINESS MACHINES CORP. 10 Jan., 1968 [13 Jan., 1967], No. 1368/68. Heading C4S. [Also in Division H1] A semi-conductor scanning device comprises a plurality of semi-conductor elements each having at least one PN junction, formed adjacent an electroluminescent layer 24, means for varying the relative potentials of same so that at any one time one group of elements i.e. that above the null line shown, is non-conductive, a second group below the null line is saturated and a third group about the null line is in a state between saturation and non-conduction. Ramp voltage 36 causes the null line to scan the array and A.C. modulated video input at 42 causes the third group to oscillate between the saturated and non-conductive states to excite the adjacent portion of the E.L. layer. No luminescence occurs in the major portion of the conductive region due to D.C. saturation. In Fig. 1, the device is regarded as formed of S.C. elements formed horizontally across the device each having PNPNP regions adjacent separate P- type dots 20-1, 20-2 ... 20-N forming backbiased junctions J 3 and separate ohmic contacts 22-1, 22-2 ... 22-N. A constant source of minority carriers is preferably employed, the carriers being injected into a semi-conductive layer 14 of variable potential relative to another layer 18 having a potential gradient therein, layer 16 assuming a potential distribution as a function of the adjacent layers. Above the null line the carriers recombine, J 1 junction being forward biased, but are re-injected into layer 16 below the null line, where J 1 junction is reverse biased. Player 12 may be 15 mm. thick for mechanical rigidity, the remaining layers being thin, e.g. ¢ mm. thick, to prevent hole loss by recombination, for materials such as Si. Layers 12 to 20 and conductive elements 22-1, 22-2 . . . 22-N may be replaced by a matrix of opposed diodes connected to a potential divider (Fig. 2, not shown), the E.L. layer being grounded. Low intensity light flashes produced by the P-dots becoming successively conductive when traversed by the null line may be overcome by filtering or controlling the ambient intensity to obscure the flash.

    8.
    发明专利
    未知

    公开(公告)号：DE1214720B

    公开(公告)日：1966-04-21

    申请号：DEJ0025763

    申请日：1964-05-02

    Applicant: IBM

    Inventor： HORTON JOHN W ,  LYNCH ROBERT J

    IPC: G01B11/02 ,  G06K7/10 ,  H01L31/00 ,  H04N3/00 ,  H04N3/10

    Abstract: 1,010,583. Sensing records; character recognition. INTERNATIONAL BUSINESS MACHINES CORPORATION. April 14, 1964 [May 10, 1963], No. 15317/64. Headings G4M and G4R. [Also in Divisions G1 and H1] General.-A solid-state scanning device comprises three layers 12, 14, 16, Fig. 3, which form junctions 18, 20 which are equivalent to oppositely-poled diode pairs 18A, 20A to 18E, 20E at points where radiation falls on layer 12. A potential gradient is applied along layer 12 and a sweep voltage is applied to layer 16, the arrangement being such that as the sweep voltage equals the potential of each successive diode pair, that pair is blocked, and if radiation is falling on the corresponding point of layer 12 an abrupt change in the total current through resistor 32 takes place, no such change occurring when a non-illuminated point on layer 12 is being scanned. Character recognition.-By making the layers wide enough to cover a character, the device can be made to function in a manner equivalent to the relative movement of the character past a slit to produce a characteristic waveform. In the modified device of Fig. 6, the layers are circular and layer 12 has a number of contact studs 56 between which the potential gradient may be developed. The scanning "slit" produced by this arrangement is non-linear and variable in curvature as indicated by the equipotential lines 58. Each character may be examined by a succession of different scans by applying the potential gradient across different pairs of contacts 58 in turn, either by mechanical or electronic-switches. In Fig. 7 the potential gradient across layer 12 is applied between a circular conductor 60 and a central contact 62 whereby an expanding or contracting circle scan can be performed. Sensing perforated cards.-A punched card 72, Fig. 8, is scanned column-by-column using 80 linear devices 10G-10M, a sweep voltage from generator 78, which may be remotely situated, being applied to devices 10 in turn from taps on a delay line 76 or other commutator. Alternatively each device 10 may have an associated scan generator. In another embodiment the columns may be scanned in turn by a single device 10 formed in zig-zag fashion over the entire card area.

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