公开(公告)号：FR2282163A1

公开(公告)日：1976-03-12

申请号：FR7521463

申请日：1975-07-01

Applicant: IBM

Inventor： BLACHMAN ARTHUR G ,  MANNOR BRIARCLIFF ,  YOUNG DONALD R

IPC: H01L21/283 ,  H01L21/00 ,  H01L21/3115 ,  H01L21/8234 ,  H01L21/8247 ,  H01L27/06 ,  H01L29/00 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L21/265 ,  H01L29/94

Abstract: In the prodn. of metal oxide semiconductors (MOS structures) by applying a SiO2 layer to a p-conducting Si substrate and then adjusting the surface potential of the Si, a negative charge is produced in the boundary layer between then Si substrate and the SiO2 layer by introducing B ions into the SiO2 layer, which makes the substrate surface more strongly p-conducting, and then the oxide-coated substrate is tempered in a gas atmos. Method is useful in the prodn. of MOS capacitors, field effect transistors (FETs) and printed circuit contg. FETs. The process is simple, easy and exact, prevents the formation of positive charges in the SiO2 layer and makes the substrate surface more strongly p-conducting.