MAGNETORESISTIVE (MR) SENSOR WITH MR ENHANCING LAYER

    公开(公告)号:MY115680A

    公开(公告)日:2003-08-30

    申请号:MYPI9703895

    申请日:1997-08-25

    Applicant: IBM

    Abstract: AN MR SENSOR WITH AN IMPROVED MR COEFFICIENT AND IMPROVED THERMAL STABILITY IS PROVIDED BY EMPLOYING ONE OR MORE CHROMIUM BASED SPACER LAYERS WHICH ARE INTERFACIALLY ADJACENT A PERMALLOY (NIFE) STRIPE. THE CHROMIUM BASED SPACER LAYERS MAY BE NIFECR OR NICR. THE BEST COMPOSITIONS HAVE BEEN FOUND TO BE (NI89FE21)60CR40 AND NI60CR40. FOR NICR THE MR COEFFICIENT OF THE MR STRIPE IS MOST ENHANCED WHEN THE NICR LAYERS IS DEPOSITED ON A LAYER OF TANTALUM (TA). FURTHER, WHEN THE THICKNESSES OF THE NIFECR AND THE NICR LAYERS ARE 25Å AND 50Å RESPECTIVELY THE MR COEFFICIENTS ARE OPTIMIZED. BOTH SPACER LAYERS HAVE A HIGH RESISTANCE COMPATIBLE WITH LOW SHUNTING OF THE SENCE CURRENT. (FIG.1)

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