Abstract:
A method is disclosed for sputtering epitaxially a layer of stoichiometric garnet composition from a single target wherein the target is composed of a mixture of the separate components of the sputtered layer. Illustratively, both at a substrate temperature of approximately 450*C and at another substrate temperature between 800-850*C, there was obtained formation of a film of gallium substituted yttrium iron garnet (Ga:YIG). A target was made up of the desired stoichiometry with a mixture of the individual oxides pressed to 85% of the compound''s theoretical density. Generally, the steps of the method are: (1) applying a radiofrequency bias to the substrate during sputtering to prevent the deposition of an easily resputtered component of the target; and (2) changing the power density to the target during deposition. Specifically, a target was made up of a mixture of individual oxides Y2O3 + Ga2O3 + Fe2O3 which was pressed to 85% of its theoretical density. Exemplary films of stoichiometric composition were obtained with a radio-frequency bias on the substrate in the range approximately from ground to 100 volts and with power density to the target in the range of approximately 5 to 65 watts/in2. The stoichiometric ratio for the composition was Y3Fe(5 x)GaxO12, where 0
Abstract:
A METHOD FOR IMPROVING ADHESION BETWEEN A CONDUCTIVE LAYER AND A SUBSTRATE OF INSULATING MATERIAL IS TAUGHT WHICH INCLUDES THE STEPS OF PROVIDING A SUBSTRATE OF INSULATING MATERIAL SUCH AS SILICON DIOXIDE WHICH CONTAINS A FIRST CATION AND A FIRST ANION. A SECOND CATION SUCH AS ALUMINUM IS INTRODUCED INTO THE SUBSTRATE SUBSTITUTIONALLY BY DIFFUSION OR ION BOMBARDMENT. FINALLY, A LAYER OF CONDUCTIVE MATERIAL IS DEPOSITED ON THE SURFACE OF THE SUBSTRATE BY VACUUM EVAPORATION OF SPUTTERING. THE CONDUCTIVE MATERIAL INCLUDES A THIRD CTION SUCH AS TUNGSTEN WHICH HAS AN AFFINITY FOR THE FIRST ANION. THE INTRODUCTION OF THE SECOND CATION TO CARRIED OUT IN ONLY THE SURFACE LAYERS OF THE SUBSTRATE SUCH THAT DIELECTRIC CHARACTERISTICS OF THE SUBSTRATE ARE SUBSTANTIALLY UNAFFECTED. THE INVENTION BASICALLY TEACHES PROVIDING SITES, IN A INSULATING SUBSTRATE, CONTAINING UNBOUND ATOMS WHICH ARE CAPABLE OF CHEMICALLY BONDING WITH THE DEPOSITED CONDUCTIVE MATERIAL THEREBY OBTAINING IMPROVED ADHESION AT LOW TEMPERATURE (E.G. AT TEMPERATURES OF
500*C. AND BELOW FOR W OR MO, WHEREAS WITHOUT THE SITES PROVIDED, POOR ADHESION WOULD TAKE PLACE BELOW 500*C.).
Abstract:
A magnetoresistive permalloy film is deposited upon a substrate and coated with a separating layer composed of titanium or a similar high resistivity, conductive material. A soft biasing layer of a material such as permalloy or a hard biasing material such as cobalt chromium is deposited upon the separating layer to complete a sandwich. All layers are coextensive in outline because their outlines are formed by a single etching step.
Abstract:
1301529 Metallizing non-conductors INTERNATIONAL BUSINESS MACHINES CORP 3 June 1970 [30 June 1969] 26714/70 Heading C7F A substrate of non-conductive material having a first cation and a first anion has introduced into the surface thereof a material having a second cation of valency different from that of the first cation to provide in said surface sites containing unbound ions, and a conductive material having a third cation different from said second cation and having an affinity for the first anion is deposited thereon. The substrate is preferably an oxide, nitride or carbide of Si or Ge, but sulphides, selenides, tellurides, phosphides, and oxidized Si are also referred to. The said second cation may be introduced as a metal or compound by ion-implantation or by forming a few monolayers on the substrate surface, e.g. by vapour deposition, and heating to cause diffusion thereinto; the second cation may be Al, P, Fe, Cr, Mg, Ta, Zr, Be or B. The conductive material with the third cation may be deposited by sputtering, vacuum deposition, or chemical vapour deposition at less than 600C. and may be Mo, V, W, Nb or Ta. Typically, SiO 2 is implanted with Al and then coated with W, e.g. from WF 6 and H 2 .
Abstract:
1380815 Waveguides; conductors INTERNATIONAL BUSINESS MACHINES CORP 24 Oct 1972 [27 Dec 1971] 49067/72 Headings H1A and H1W The frequency of operation and temperature of the conductors of a transmission are arranged so that transmission takes place in the "anomalous spin effect" (ASE) region, the thickness of the conductor being such that its impedance is less than that of the thick film impedance. The ASE region is defined by # 0 /l
Abstract:
MAGNETORESISTIVE SANDWICH INCLUDING SENSOR ELECTRICALLY PARALLEL WITH ELECTRICAL SHUNT AND MAGNETIC BIASING LAYERS A magnetoresistive Permalloy* film is deposited upon a substrate and coated with a separating layer composed of titanium or a similar high resistivity, conductive material. A soft biasing layer of a material such as Permalloy* or a hard biasing material such as cobalt chromium is deposited upon the separting layer to complete a sandwich. All layers are coextensive in outline because their outlines are formed by a single etching step.
Abstract:
1391150 Magnetic heads INTERNATIONAL BUSINESS MACHINES CORP 12 Oct 1973 [30 Nov 1972] 47709/73 Heading G5R [Also in Division H3] Decrease of sensitivity due to oxidization of a magnetoresistive thin film magnetic bubble sensor or magnetic tape reading head is prevented by an overlay of Al 2 O 3 or Si 3 N 4 . The magnetoresistive material may be permalloy, or an alloy of Ni-Fe, Ni-Fe-Co, Ni-Co or Fe-Co, and have a thickness of between 200 and 1000. The overlay may be of twice this thickness. As applied to sensing magnetic bubbles 4, Fig. 1, in a magnetic plate 2, the sensor consists of a permalloy element 10 having an easy axis of magnetization in the direction of current flow from a source 12 through the element. The presence of a magnetic bubble changes the element resistance which is detected by the change of voltage across the source. A layer of a dielectric material S and a sputtered layer 18 of Al 2 O 3 or Si 3 N 4 extend over the magnetic plate and the magnetoresistive element. Similar layers are applied over the reading head 20, Fig. 2, of a moving magnetic tape 22, the magnetoresistive sensor 10 being similar to that shown in Fig. 1.