UNDERLAYER DOPING IN THIN FILM MAGNETIC RECORDING MEDIA

    公开(公告)号:MY116456A

    公开(公告)日:2004-02-28

    申请号:MYPI9200633

    申请日:1992-04-14

    Applicant: IBM

    Abstract: THE MAGNETIC PROPERTIES OF A COBALT BASED, THIN FILM, MAGNETIC RECORDING LAYER ARE CONTROLLED, INDEPENDENT OF CONTROLLING THE PROCESS FOR DEPOSITING THE MAGNETIC LAYER ITSELF, BY THE INTRODUCTION OF PROCESS COMPATIBLE DOPANT GASES INTO AN ARGON ATMOSPHERE DURING THE VACUUM DEPOSITION (I.E. A SPUTTERING PROCESS OR AN EVAPORATION PROCESS) OF A CHROMIUM BASED UPDERLAYER UPON WHICH THE MAGNETIC LAYER IS SUBSEQUENTLY DEPOSITED. THE SAME OR A DIFFERENT DOPANT MAY ALSO BE INTRODUCED INTO THE MAGNETIC LAYER. THE PROCESS COMPATIBLE DOPANT GASES DESCRIBED CONTAIN OXYGEN, NITROGEN AND/OR CARBON, AND MIXTURES THEREOF, AND INCLUDE THE GROUP PURIFIED AIR, OXYGEN, NITROGEN, A MIXTURE OF OXYGEN AND NITROGEN, CARBON MONOXIDE, CARBON DIOXIDE, METHANE AND WATER VAPOR.( FIG 1 )

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