公开(公告)号：DE3687354T2

公开(公告)日：1993-07-15

申请号：DE3687354

申请日：1986-02-25

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  MCKOY THERMON EZZARD

IPC: C30B31/06 ,  C30B29/40 ,  C30B31/02 ,  H01L21/223 ,  H01L21/225

Abstract: A dopant is diffused into a Group III-V semiconductor body, by:… a) placing a deposition substrate possessing a dopant-containing layer in a heating chamber so that the dopantcontaining layer faces an object substrate made from a III-V simiconductor material;… b) introducing into the hearting chamber a source of the same Group V element as that in the object substrate, the source being capable of providing the Group V element in the vapour phase at the diffusion temperature with the vapour pressure of the vapour phase Group V element being at or above the equilibrium vapour pressure of the Group V element present at the surface of the object substrate; and,… c) heating the deposition substrate and the object subatrate to the diffusion temperature for a period of time sufficient to diffuse a desired amount of dopant into the object substrate to a desired depth therein.

公开(公告)号：DE3687354D1

公开(公告)日：1993-02-11

申请号：DE3687354

申请日：1986-02-25

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  MCKOY THERMON EZZARD

IPC: C30B31/06 ,  C30B29/40 ,  C30B31/02 ,  H01L21/223 ,  H01L21/225

Abstract: A dopant is diffused into a Group III-V semiconductor body, by:… a) placing a deposition substrate possessing a dopant-containing layer in a heating chamber so that the dopantcontaining layer faces an object substrate made from a III-V simiconductor material;… b) introducing into the hearting chamber a source of the same Group V element as that in the object substrate, the source being capable of providing the Group V element in the vapour phase at the diffusion temperature with the vapour pressure of the vapour phase Group V element being at or above the equilibrium vapour pressure of the Group V element present at the surface of the object substrate; and,… c) heating the deposition substrate and the object subatrate to the diffusion temperature for a period of time sufficient to diffuse a desired amount of dopant into the object substrate to a desired depth therein.