公开(公告)号：FR2312114A1

公开(公告)日：1976-12-17

申请号：FR7610361

申请日：1976-04-01

Applicant: IBM

Inventor： HARVILCHUCK JOSEPH M ,  LOGAN JOSEPH S ,  METZGER WILLIAM C ,  SCHAIBLE PAUL M ,  RISEMAN JACOB ,  SCHWARTZ GERALDINE C

IPC: C23F4/00 ,  H01L21/3065 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/72

Abstract: In the selective removal of metal and/or semiconductor materials by reactive ion etching using a photoresist or dielectric film, e.g. SiO2, Si3H4 or Al2O3 as mask, the improvement comprises subjecting the substrate to be treated to cathodic sputtering under the action of a plasma or an atmos. under preliminary vacuum conditions, consisting of CCl4, HCl, Cl2, CBr4, HBr, Br2, CI4, I2, mixts. and cpds. of these, without addn. of F2 and F cpds. Method is used in the prodn. of monolithic semiconductor circuits. A relatively high etching rate is obtd. without undercutting.