公开(公告)号：CA1155326A

公开(公告)日：1983-10-18

申请号：CA385499

申请日：1981-09-09

Applicant: IBM

Inventor： MOYER WILLIAM A ,  WOOD ROBERT L

IPC: G03C1/72 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

Abstract: FI 9-80-019 Process for Forming a Patterned Resist Mask The performance of ethylene glycol alkylether developers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by adding an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a complexing agent, such as ammonium citrate, to the developer. The additives provide a consistent development rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity.