公开(公告)号：DE69306333T2

公开(公告)日：1997-06-12

申请号：DE69306333

申请日：1993-07-29

Applicant: IBM

Inventor： OWA SOICHI ,  KUMATA KIYOSHI ,  KANO SATORU S

IPC: G02F1/35 ,  G02F1/017 ,  G02F1/355 ,  G02F1/37 ,  G02F1/377

Abstract: This invention is intended to provide a nonlinear optical device with sufficiently high nonlinearity for efficient wavelength conversion or optical modulation. The nonlinear optical device according to this invention comprises a substrate and material layers disposed thereupon, at least a portion of said material layers being alternate insulator layers and semiconductor layers comprising a multi-quantum-well structure, the potential for electrons in said semiconductor layers being asymmetric in the z-direction normal to said substrate. A quantum well structure that uses an insulator layer as the barrier layer and a semiconductor layer as the well layer satisfies the requirements of a well depth of 3 eV or more, and of a difference between the minimum energy level (e1) of the electrons in the conduction band and the maximum energy level (h1) of the electrons in the valence band of 3 eV or more, whereby the device is transparent for visible light, including second harmonic generated blue light.

公开(公告)号：DE69306333D1

公开(公告)日：1997-01-16

申请号：DE69306333

申请日：1993-07-29

Applicant: IBM

Inventor： OWA SOICHI ,  KUMATA KIYOSHI ,  KANO SATORU S

IPC: G02F1/35 ,  G02F1/017 ,  G02F1/355 ,  G02F1/37 ,  G02F1/377

Abstract: This invention is intended to provide a nonlinear optical device with sufficiently high nonlinearity for efficient wavelength conversion or optical modulation. The nonlinear optical device according to this invention comprises a substrate and material layers disposed thereupon, at least a portion of said material layers being alternate insulator layers and semiconductor layers comprising a multi-quantum-well structure, the potential for electrons in said semiconductor layers being asymmetric in the z-direction normal to said substrate. A quantum well structure that uses an insulator layer as the barrier layer and a semiconductor layer as the well layer satisfies the requirements of a well depth of 3 eV or more, and of a difference between the minimum energy level (e1) of the electrons in the conduction band and the maximum energy level (h1) of the electrons in the valence band of 3 eV or more, whereby the device is transparent for visible light, including second harmonic generated blue light.