公开(公告)号：JPH1041478A

公开(公告)日：1998-02-13

申请号：JP8620597

申请日：1997-04-04

Applicant: IBM

Inventor： PANAYOTESU KONSTANTINOV ANDRIK ,  DAVID EDWARD KOTTEKI ,  CATHERINE LYNN SANGER

IPC: H01L21/8247 ,  H01L21/02 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide an electrode structure which can be formed without mechanically, chemically polishing or patterning a thick electrode layer by a method wherein a memory device possessed of ferroelectric material or capacitor dielectric material is sandwiched between a plate electrode and a stacked electrode. SOLUTION: An electric device is formed by the use of a composite electrode. A device 40 is equipped with an insulating or semiconductor substrate 12, a contact region 14 formed inside the substrate 12, and a dielectric layer 1 formed on the substrate 12. A conductive structure 40 is wholly or partially brought into electric contact with the top of a conductor plug 2. A capacitor dielectric material layer 9 nearly uniform in thickness is formed on the exposed part of a stacked electrode. A plate electrode 20 is electrically insulated from the stacked electrode but electrically connected to the plate electrode of another device formed on the same substrate 12. By this setup, a memory device such as a capacitive memory device used for a DRAM can be formed.