公开(公告)号：US3248256A

公开(公告)日：1966-04-26

申请号：US21266462

申请日：1962-07-26

Applicant: IBM

Inventor： YOSHIRO BUDO ,  CASWELL HOLLIS L ,  PRIEST JOSEPH R

IPC: C23C14/00

CPC classification number: C23C14/0021 ,  Y10S438/944

公开(公告)号：DE1278194B

公开(公告)日：1968-09-19

申请号：DEJ0022346

申请日：1962-09-04

Applicant: IBM

Inventor： PRIEST JOSEPH R ,  CASWELL HOLLIS L

IPC: C23C14/10 ,  H01B1/00 ,  H01L21/316 ,  H01L39/18

Abstract: A substrate is coated with silicon monoxide by heating a source of SiO above 1300 DEG C. and below 1600 DEG C. at a pressure below 10-5 mm. Hg., and preventing deposition of SiO until the desired temperature of the source, e.g. 1328 DEG C., is attained. The process may be applied to forming layers of metals interlayered with SiO which can be used as cryotrons. For example, Fig. 1 shows SiO films 1 deposited between a gate 5 and magnetic shield 3b consisting of layers of lead with a control layer 3a of tin. The coating of SiO is under predetermined stress which is controlled by the rate of deposition, and details including graphs are given which indicate a preferred rate of coating of 4-40 rA per second. Apparatus is described (not shown) provided with three evaporation stations, each station being also provided with a shutter which prevents deposition until the desired temperature indicated by a thermo-couple is reached. Masks to give a desired pattern of coating are also provided. The SiO may be in tablet form with central holes for stacking on a wire support.

公开(公告)号：CA734378A

公开(公告)日：1966-05-17

申请号：CA734378D

Applicant: IBM

Inventor： CASWELL HOLLIS L ,  PRIEST JOSEPH R ,  BUDO YOSHIRO