公开(公告)号：JP2000252445A

公开(公告)日：2000-09-14

申请号：JP2000046447

申请日：2000-02-23

Applicant: IBM

Inventor： RAMACHANDRA DIVAKARUUNI ,  EUGENE LEE ,  MANDELMAN JACK A

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/00 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method and structure for generating more stable threshold voltage. SOLUTION: Related to the integrated circuit element and manufacture of it, a gate stack is formed wherein a pattern comprising a storage node diffusion region adjacent to a storage element and a bit line conduct diffusion region 306 facing the storage node diffusion region is formed. An impurity is implanted in the storage node diffusion region and bit line contact diffusion region 306 and an insulator layer is formed on the gate stack with the pattern. A side wall spacer is formed along a part of the gate stack with a pattern adjoining the bit line contact diffusion region 306, and a halo implant 60 is implanted in the bit line contact diffusion region so that no insulator layer blocks the halo implant from the second diffusion region. Further, the integrated circuit element is annealed so that the halo implant 60 is diffused before the impurity is diffused.