公开(公告)号：JPH10189473A

公开(公告)日：1998-07-21

申请号：JP30678397

申请日：1997-11-10

Applicant: IBM

Inventor： KAM LOWIN LEE ,  LEWIS DAVID ANDREW ,  RAMAN GOBICHIECHITSUPUARAIYAMU

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide an electronic device having an extremely shallow and abrupt junction with high dopant surface concentration by a microwave annealing process. SOLUTION: This method utilizes microwave energy to anneal an ion implanted wafer. The wafer can be substantially completely annealed by controlling time, power density and temperature area while limiting (and substantially preventing) diffusion of dopant in silicon. Thus, the wafer can be substantially completely annealed. In this manner, a semiconductor element scaled by high performance is provided. And, conditions are altered to give dopant profile (diffusion) to the silicon and can be controlled. In another aspect, a profile depth of less than 50nm and net doping concentration of 6nm to several ten times or more is changed in the semiconductor wafer and surface concentration of the dopant exceeds about 1×10 /cm in the method for forming a PN junction.