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公开(公告)号：DE68925459T2
公开(公告)日：1996-09-05
申请号：DE68925459
申请日：1989-10-19
Applicant: IBM
Inventor： BREZOCZKY BLASIUS , CUOMO JEROME J , GUARNIERI C RICHARD , RAMANATHAN KUMBAKONAM V
Abstract: A process for forming chromium dioxide thin films which are receptive to high density magnetic recording. The process comprises depositing both chromium and oxygen on a substrate by evaporative techniques and concurrently bombarding the substrate with high energy ions of at least one of the film constituents to form a latent CrOx film forming layer. The process is carried out at approximately room temperature. The as-grown latent film forming layer is subsequently heat treated by a rapid thermal anneal step which raises the temperature of the as-grown fillm to about 500 DEG C. The rapid thermal anneal step preferably comprises a series of at least five separate pulses over a 10-second time span. After the rapid thermal anneal, the sample is rapidly quenched to room temperature.
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公开(公告)号：DE68925459D1
公开(公告)日：1996-02-29
申请号：DE68925459
申请日：1989-10-19
Applicant: IBM
Inventor： BREZOCZKY BLASIUS , CUOMO JEROME J , GUARNIERI C RICHARD , RAMANATHAN KUMBAKONAM V
Abstract: A process for forming chromium dioxide thin films which are receptive to high density magnetic recording. The process comprises depositing both chromium and oxygen on a substrate by evaporative techniques and concurrently bombarding the substrate with high energy ions of at least one of the film constituents to form a latent CrOx film forming layer. The process is carried out at approximately room temperature. The as-grown latent film forming layer is subsequently heat treated by a rapid thermal anneal step which raises the temperature of the as-grown fillm to about 500 DEG C. The rapid thermal anneal step preferably comprises a series of at least five separate pulses over a 10-second time span. After the rapid thermal anneal, the sample is rapidly quenched to room temperature.
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