公开(公告)号：WO2011034737A3

公开(公告)日：2011-06-30

申请号：PCT/US2010047599

申请日：2010-09-02

Applicant: IBM ,  ADKISSON JAMES ,  ELLIS-MONAGHAN JOHN ,  JAFFE MARK ,  RASSEL RICHARD

Inventor： ADKISSON JAMES ,  ELLIS-MONAGHAN JOHN ,  JAFFE MARK ,  RASSEL RICHARD

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/225

CPC classification number: H01L27/14609 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

Abstract: Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body (150) in a first region of a semiconductor layer (100); a floating diffusion node (165) in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation (105) in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.

Abstract translation: 像素传感器单元，制造像素传感器单元的方法和像素传感器单元的设计结构。 所述像素传感器单元包括：在半导体层（100）的第一区域中的光电二极管主体（150）; 在半导体层的第二区域中的浮动扩散节点（165），在第一和第二区域之间并邻接第一和第二区域的半导体层的第三区域; 和所述半导体层中的绝缘隔离（105），围绕所述第一，第二和第三区域的介电隔离，所述介质隔离邻接所述第一，第二和第三区域以及所述光电二极管主体，所述绝缘隔离件不邻接所述浮动扩散节点， 介于介电隔离和浮动扩散节点之间的第二区域。

公开(公告)号：GB2486607A

公开(公告)日：2012-06-20

申请号：GB201204572

申请日：2010-09-02

Applicant: IBM

Inventor： ADKISSON JAMES ,  ELLIS-MONAGHAN JOHN ,  JAFFE MARK ,  RASSEL RICHARD

IPC: H01L27/146

Abstract: Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body (150) in a first region of a semiconductor layer (100); a floating diffusion node (165) in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation (105) in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.

公开(公告)号：GB2486607B

公开(公告)日：2014-01-08

申请号：GB201204572

申请日：2010-09-02

Applicant: IBM

Inventor： ADKISSON JAMES ,  ELLIS-MONAGHAN JOHN ,  JAFFE MARK ,  RASSEL RICHARD

IPC: H01L27/146

Abstract: Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.