公开(公告)号：JPH11258774A

公开(公告)日：1999-09-24

申请号：JP906799

申请日：1999-01-18

Applicant: IBM

Inventor： DONALD C WHEELER ,  MANDELMAN JACK A ,  REBECCA D MEA

IPC: G03F1/28 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To make it possible to control a resist pattern formed in manufacture by a pattern to be formed by providing a multilayer mask with a multiplex light phase shifting means for shifting phases of light so that light passing the mask has plural phases. SOLUTION: A base 11 for the mask 10 mounts a light shielding material 13 having a linear form on its surface. The multiplex light phase shifting means is arranged adjacently to one side of the material 13. A first channel 15 of height TP2 is arranged adjacently to an area 14. A second channel 16 of height TP3 is similarly arranged adjacently to the 1st channel 15. The phase shift of light to be passed is defined by these height values TP1 , TP2 , TP3 . Differences between the phase of light passing a part 12 of the mask substrate and the phases of light passing opposite side parts 14 to 16 should be values other than 0 deg., 180 deg. or their multiples in at least one, preferably two or more light phases.