公开(公告)号：GB2616558B

公开(公告)日：2025-02-26

申请号：GB202308937

申请日：2021-11-03

Applicant: IBM

Inventor： PRANEET ADUSUMILLI ,  TAKASHI ANDO ,  REINALDO VEGA ,  CHENG CHI

IPC: H10B63/00 ,  H10N70/20

Abstract: A resistive random access memory (ReRAM) device is provided. The ReRAM device includes a stack structure including a first electrode, a metal oxide layer in contact with the first electrode, and a second electrode in contact with the metal oxide layer. A portion of the stack structure is modified by ion implantation, and the modified portion of the stack structure is offset from edges of the stack structure.

公开(公告)号：GB2616757B

公开(公告)日：2025-03-12

申请号：GB202308936

申请日：2021-10-11

Applicant: IBM

Inventor： TAKASHI ANDO ,  PRANEET ADUSUMILLI ,  REINALDO VEGA ,  CHENG CHI

IPC: H10N70/00 ,  H10B63/00 ,  H10N70/20

Abstract: A resistive random access memory (ReRAM) device is provided. The ReRAM device includes a first electrode, a first resistive structure in contact with the first electrode, a dielectric layer in contact with the first resistive structure, and a second resistive structure in contact with the dielectric layer. The second resistive structure includes a resistive material layer and a high work function metal core. The ReRAM device also includes a second electrode in contact with the second resistive structure.